IXTB62N50L IXYS, IXTB62N50L Datasheet - Page 2

• Manufacturer Part Number: IXTB62N50L
• Description: MOSFET N-CH 500V 62A PLUS264
• Manufacturer: IXYS

Specifications of IXTB62N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 500mA, 20V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 550nC @ 20V
• Input Capacitance (ciss) @ Vds: 11500pF @ 25V
• Power - Max: 800W
• Mounting Type: Through Hole
• Package / Case: 3-PLUS264™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.1 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 62 A
• Power Dissipation: 800 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 62
• Rds(on), Max, Tj=25°c, (?): 0.100
• Ciss, Typ, (pf): 11500
• Qg, Typ, (nc): 550
• Trr, Typ, (ns): 500
• Pd, (w): 800
• Rthjc, Max, (k/w): 0.156
• Package Style: PLUS264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Safe Operating Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
I
I
V
t
Note 1: Pulse test, t ≤ 300 μs, duty cycle, d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
Test Conditions
V
Test Conditions
V
Test Conditions
V
Repetitive; pulse width limited by T
I
Note 1
I
F
F
PRELIMINARY TECHNICAL INFORMATION
DS
DS
GS
= I
= I
= 400 V, I
= 0 V
S
S
= 10 V; I
V
V
R
V
, V
, -di/dt = 100 A/μs, V
GS
GS
GS
G
GS
= 0 V, V
= 15 V, V
= 2 Ω (External),
= 20 V, V
= 0 V,
D
D
= 0.5 • I
= 0.75 A, T
4,835,592
4,881,106
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
4,931,844
5,017,508
5,034,796
, Note 1
R
C
= 100V
= 90°C
(T
(T
DSS
DSS
J
J
, I
, I
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
JM
D
D
= 0.5 • I
= 0.5 • I
5,237,481
5,381,025
5,486,715
Min.
Min.
Min.
D25
D25
300
10
Characteristic Values
Characteristic Values
11500
1460
Typ.
Typ. Max.
Typ. Max.
0.15
500
210
110
550
115
180
6,162,665
6,259,123 B1
6,306,728 B1
15
36
85
75
0.156 °C/W
Max.
20
176
1.5
62
°C/W
6,404,065 B1
6,534,343
6,583,505
W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
PLUS 264
6,683,344
6,710,405 B2 6,759,692
6,710,463
TM
6,727,585
6,771,478 B2 7,071,537
(IXTB) Outline
IXTB62N50L
7,005,734 B2
7,063,975 B2
Ref: IXYS CO 0113 R0
7,157,338B2