IXFL44N80 IXYS, IXFL44N80 Datasheet
IXFL44N80
Manufacturer Part Number
IXFL44N80
Description
MOSFET N-CH 800V 44A ISOPLUS264
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFL44N80.pdf
(2 pages)
Specifications of IXFL44N80
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
165 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
380nC @ 10V
Input Capacitance (ciss) @ Vds
10000pF @ 25V
Power - Max
550W
Mounting Type
Through Hole
Package / Case
ISOPLUS264™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.165 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
44 A
Power Dissipation
550 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
44
Rds(on), Max, Tj=25°c, (?)
0.165
Ciss, Typ, (pf)
10000
Qg, Typ, (nc)
380
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
694
Rthjc, Max, (ºc/w)
0.18
Package Style
ISOPLUS264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
ISOPLUS264
(Electrically Isolated Backside)
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
© 2003 IXYS All rights reserved
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
Weight
Symbol
V
V
I
I
R
D25
DM
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
ISOL
DSS
GS(th)
DSS
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS
I
Test Conditions
V
V
V
Note 1
S
ISOL
V
V
V
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, Note 1
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= V
= 0 V, I
≤ 1 mA
= 10 V, I
= V
= 0 V
= ±20 V
TM
DM
GS
, di/dt ≤ 100 A/µs, V
, I
DSS
Power MOSFETs
D
D
= 3mA
= 8mA
TM
D
DC
= I
G
, V
= 2 Ω
T
DS
t = 1 min
t = 1 s
= 0
GS
= 1 MΩ
DD
(T
T
T
≤ V
J
J
J
rr
= 25°C, unless otherwise specified)
= 25°C
= 125°C
DSS
800
min.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
IXFL 44N80
2500
3000
800
800
±20
±30
176
550
150
300
44
44
64
5
4
5
max.
±100 nA
0.165 Ω
100 µA
4.0 V
2 mA
V/ns
mJ
V~
V~
°C
°C
°C
°C
W
V
V
A
A
A
V
V
V
g
J
ISOPLUS-264
Features
Applications
Advantages
G = Gate
E = Emitter
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly
Space savings
High power density
V
I
R
D25
DSS
DS(on)
DS (on)
G
HDMOS
TM
C = Collector
Tab = Collector
=
=
= 0.165 Ω Ω Ω Ω Ω
C
E
800 V
TM
44 A
process
DS99085(09/03)
(TAB)
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IXFL44N80 Summary of contents
Page 1
... GS(th ± GSS DSS DS DSS DS(on Note 1 © 2003 IXYS All rights reserved IXFL 44N80 rr Maximum Ratings 800 = 1 MΩ 800 GS ±20 ±30 44 176 ≤ DSS 550 -55 ... +150 150 -55 ... +150 300 2500 3000 5 Characteristic Values (T = 25°C, unless otherwise specified) J min. ...
Page 2
... JM 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ Test current I = 22A T IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min ...