IXFR26N120P IXYS, IXFR26N120P Datasheet

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IXFR26N120P

Manufacturer Part Number
IXFR26N120P
Description
MOSFET N-CH 1200V 15A ISOPLUS247
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXFR26N120P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
6.5V @ 1mA
Gate Charge (qg) @ Vgs
225nC @ 10V
Input Capacitance (ciss) @ Vds
14000pF @ 25V
Power - Max
320W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.5 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
15 A
Power Dissipation
320 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
15
Rds(on), Max, Tj=25°c, (?)
0.5
Ciss, Typ, (pf)
14000
Qg, Typ, (nc)
225
Trr, Typ, (ns)
-
Trr, Max, (ns)
300
Pd, (w)
320
Rthjc, Max, (ºc/w)
0.39
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFR26N120P
Manufacturer:
ST
Quantity:
30 000
Polar
HiPerFET
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
V
F
Weight
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
ISOL
GS(th)
DS(on)
J
DSS
= 25°C, unless otherwise specified)
TM
Power MOSFET
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
Maximum lead temperature for soldering
Plastic body for 10s
50/60 Hz, RMS, 1 minute
Mounting force
Test Conditions
V
V
V
V
V
V
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
TM
= 0V, I
= V
= ± 30V, V
= V
= 0V
= 10V, I
DM
, V
GS
DSS
, I
D
DD
D
D
= 3mA
= 1mA
= 13A, Note 1
≤ V
DS
DSS
= 0V
, T
J
GS
≤ 150°C
= 1MΩ
T
J
= 125°C
JM
IXFR26N120P
20..120/4.5..27
1200
-55 ... +150
-55 ... +150
Min.
3.5
Characteristic Values
Maximum Ratings
1200
1200
2500
± 30
± 40
320
150
300
260
Typ.
1.5
15
60
13
15
5
± 200
Max.
500 mΩ
6.5
50
5 mA
N/lb.
V/ns
V~
nA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
J
g
V
I
R
t
ISOPLUS247 (IXFR)
G = Gate
S = Source
Features
Advantages
Applications:
D25
rr
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
High Voltage Switched-mode and
High Voltage Pulse Power Applications
High Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
High Voltage DC-DC converters
High Voltage DC-AC inverters
resonant-mode power supplies
Generators
Easy assembly
Space savings
High power density
DS(on)
DSS
E153432
DS (on)
= 1200V
= 15A
≤ ≤ ≤ ≤ ≤ 500mΩ Ω Ω Ω Ω
≤ ≤ ≤ ≤ ≤ 300ns
HDMOS
D
TM
= Drain
Isolated Tab
process
DS99886A (3/08)

Related parts for IXFR26N120P

IXFR26N120P Summary of contents

Page 1

... ± 30V GSS DSS DS DSS 10V 13A, Note 1 DS(on © 2008 IXYS CORPORATION, All rights reserved IXFR26N120P Maximum Ratings 1200 = 1MΩ 1200 GS ± 30 ± 1.5 ≤ 150° 320 -55 ... +150 150 -55 ... +150 300 260 2500 20..120/4.5..27 5 Characteristic Values Min. Typ. ...

Page 2

... DSS 225 , I = 13A 87 DSS D 98 0.15 Characteristic Values Min. Typ. JM 1.3 12 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFR26N120P ISOPLUS247 (IXFR) Outline Max Ω 0.39 °C/W °C/W Max 104 A 1.5 V 300 ns μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 ...

Page 3

... I - Amperes D © 2008 IXYS CORPORATION, All rights reserved V = 10V 10V 13A Value 10V IXFR26N120P Fig. 2. Extended Output Characteristics @ 25º Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 2.8 2 10V GS 2.4 2.2 2 26A D 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 ...

Page 4

... Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. = 125ºC 25ºC - 40ºC 7.5 8.0 8.5 9 25ºC J 0.9 1.0 1.1 1.2 1.3 1.000 C iss 0.100 C oss 0.010 C rss 0.001 IXFR26N120P Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 600V 13A ...

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