IXTK90P20P IXYS, IXTK90P20P Datasheet - Page 4

• Manufacturer Part Number: IXTK90P20P
• Description: MOSFET P-CH 200V 90A TO-264
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTK90P20P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 205nC @ 10V
• Input Capacitance (ciss) @ Vds: 12000pF @ 25V
• Power - Max: 890W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vdss, Max, (v): -200.0
• Id(cont), Tc=25°c, (a): -90.0
• Rds(on), Max, Tj=25°c, (?): 0.044
• Ciss, Typ, (pf): 12000
• Qg, Typ, (nc): 205
• Trr, Typ, (ns): 315
• Pd, (w): 890
• Rthjc, Max, (k/w): 0.14
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
100,000
10,000
-120
-100
-270
-240
-210
-180
-150
-120
1,000
-80
-60
-40
-20
-90
-60
-30
100
0
0
-3.0
-0.5
0
f
-3.5
-1.0
= 1MHz
-5
Fig. 9. Forward Voltage Drop of
-4.0
-1.5
Fig. 7. Input Admittance
-10
Fig. 11. Capacitance
-4.5
-2.0
Intrinsic Diode
T
-15
J
= 125ºC
V
V
GS
V
SD
DS
-2.5
-5.0
- Volts
- Volts
-20
- Volts
-3.0
-5.5
T
-25
J
= - 40ºC
T
125ºC
J
25ºC
-3.5
-6.0
= 25ºC
C iss
-30
C oss
C rss
-4.0
-6.5
-35
-4.5
-7.0
-40
-
1,000
-
100
100
-
-10
90
80
70
60
50
40
30
20
10
10
-
-9
-8
-7
-6
-5
-4
-3
-2
-1
1
0
0
-
10
0
0
R
DS(on)
Fig. 12. Forward-Bias Safe Operating Area
V
I
I
20
D
G
DS
= - 45A
= -1mA
-20
Limit
= -100V
40
Fig. 8. Transconductance
60
-40
Fig. 10. Gate Charge
Q
80
G
- NanoCoulombs
I
-60
D
V
100
DS
- Amperes
-
100
- Volts
120
-80
140
IXTK90P20P
IXTX90P20P
25µs
100µs
1ms
100ms
10ms
DC
-100
160
T
J
= - 40ºC
T
T
Single Pulse
180
J
C
125ºC
= 150ºC
= 25ºC
25ºC
-120
200
-
220
1000
-140