HCT7000M TT Electronics/Optek Technology, HCT7000M Datasheet - Page 2

• Manufacturer Part Number: HCT7000M
• Description: TRANSISTR MOS ENHANCE N-CHAN SMD
• Manufacturer: TT Electronics/Optek Technology

Specifications of HCT7000M

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 60pF @ 25V
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Package / Case: 3.18mm x 2.67mm x 1.37mm
• Lead Free Status / RoHS Status: Lead free / Not applicable
• Gate Charge (qg) @ Vgs: -

Elec tri cal Char ac ter is tics (T
Types HCT7000M, HCT7000MTX, HCT7000MTXV
Op tek re serves the right to make changes at any time in or der to im prove de sign and to sup ply the best prod uct pos si ble.
Op tek Tech nol ogy, Inc.
SYM BOL
R
V
V
I
V
DS(ON)
DS(ON)
GS(TH)
I
D(ON)
C
I
C
C
t
t(on)
G
GSS
DSS
(off)
DSS
oss
rss
iss
fs
Drain-Source Voltage
Gate Threshold Voltage
Gate Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source on-Resistance
Drain-Source on-Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Time
Turn-off Time
PA RAME TER
1215 W. Crosby Road
A
= 25
o
C un less oth er wise noted)
Car roll ton, Texas 75006
MIN MAX UNITS
100
60
75
.8
15-37
3.0
2.5
60
25
10
10
10
1
5
5
mA
mS
nA
pF
pF
pF
ns
ns
V
V
V
A
V
V
V
V
V
V
V
V
V
V
GS
DS
DS
GS
DS
GS
GS
DS
DS
DD
= V
= 0 V, V
= 10 V, V
= 10 V, I
= 25 V, V
= 0 V, I
= 0 V, V
= 10 V, I
= 10 V, I
= 15 V, I
GS
(972)323- 2200
, I
D
D
GS
DS
D
D
D
D
= 10 A
GS
GS
TEST CON DI TION
= 1 mA
= 0.5 A
= 0.5 A
= 0.2 A
= 0.5 A, V
= 15 V
= 48 V
= 4.5 V
= 0 V, f = 1MHz
gen
= 10 V, R
Fax [phone]
g
= 25