IXFX60N55Q2 IXYS, IXFX60N55Q2 Datasheet - Page 2

• Manufacturer Part Number: IXFX60N55Q2
• Description: MOSFET N-CH 550V 60A PLUS247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFX60N55Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 88 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 6900pF @ 25V
• Power - Max: 735W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.088 Ohms
• Drain-source Breakdown Voltage: 550 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 60 A
• Power Dissipation: 735 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 550
• Id(cont), Tc=25°c, (a): 60
• Rds(on), Max, Tj=25°c, (?): 0.088
• Ciss, Typ, (pf): 7300
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 735
• Rthjc, Max, (ºc/w): 0.17
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
SM
RM
S
rr
d(on)
d(off)
f
r
SD
fs
RM
thJC
thCK
iss
oss
rss
g(on)
gs
gd
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
F
GS
Test Conditions
V
TO-264
= I
I
DS
F
= 0 V
S
= 25A, -di/dt = 100 A/µs, V
, V
= 10 V; I
V
V
R
V
GS
GS
GS
GS
G
= 1.0 Ω (External),
= 0 V,
= 0 V, V
= 10 V, V
= 10 V, V
D
= 0.5 • I
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
4,850,072
4,835,592
, pulse test
(T
(T
R
DSS
DSS
J
= 100 V
J
= 25°C, unless otherwise specified)
4,931,844
4,881,106
= 25°C, unless otherwise specified)
, I
, I
JM
D
D
= 0.5 • I
= 0.5 • I
5,034,796
5,017,508
min.
D25
D25
min.
Characteristic Values
30
Characteristic Values
5,049,961
5,063,307
7300
1150
typ.
0.15
typ.
340
200
100
10
44
22
14
57
42
1
9
0.17
max.
max.
240
250
1.5
5,237,481
5,187,117
60
K/W
K/W
µC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
S
5,381,025
5,486,715
TO-264 AA Outline
PLUS 247
6,306,728B1
6,404,065B1
Terminals: 1 - Gate
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
IXFK 60N55Q2
IXFX 60N55Q2
25.91
19.81
20.32
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
20.80
15.75
19.81
TM
Millimeter
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
5.46 BSC
6,162,665
6,259,123B1 6,306,728B1 6,683,344
Millimeter
5.45 BSC
Outline
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
26.16
19.96
20.83
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
Min.
1.020
6,534,343
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.215 BSC
Min. Max.
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Inches
.215 BSC
Inches
Max.
1.030
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190
6,583,505