IXFR34N80 IXYS, IXFR34N80 Datasheet
IXFR34N80
Manufacturer Part Number
IXFR34N80
Description
MOSFET N-CH 800V 28A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFR34N80.pdf
(2 pages)
Specifications of IXFR34N80
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 17A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
270nC @ 10V
Input Capacitance (ciss) @ Vds
7500pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.24 Ohms
Forward Transconductance Gfs (max / Min)
35 s
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
28 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Fall Time
40 ns
Minimum Operating Temperature
- 55 C
Rise Time
45 ns
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
28
Rds(on), Max, Tj=25°c, (?)
0.24
Ciss, Typ, (pf)
7500
Qg, Typ, (nc)
270
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
417
Rthjc, Max, (ºc/w)
0.30
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q1149424
HiPerFET
ISOPLUS247
(Electrically Isolated Backside)
Single MOSFET Die
Avalanche Rated
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
Weight
Symbol
V
V
I
I
R
© 2000 IXYS All rights reserved
DM
D25
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
ISOL
GS(th)
DSS
DSS
DS(on)
V
V
Test Conditions
Test Conditions
S
GS
DS
GS
DS
GS
GS
J
J
C
C
C
C
C
J
C
= V
= 0 V, I
TM
DM
GS
DSS
, I
D
D
Power MOSFETs
= 3mA
= 8mA
D
TM
DS
G
T
GS
DD
J
J
J
DSS
150
min.
2.0
Characteristic Values
Maximum Ratings
typ.
IXFR 34N80
max.
4.0 V
V
ISOPLUS 247
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
E153432
G
DS (on)
V
I
R
t
D
D25
rr
DSS
DS(on)
S
TM
250 ns
= 800
=
= 0.24
TM
98674A (02/00)
28
V
A
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IXFR34N80 Summary of contents
Page 1
... Weight Symbol Test Conditions 3mA DSS 8mA GS(th GSS DSS DS DSS GS R DS(on © 2000 IXYS All rights reserved IXFR 34N80 Maximum Ratings GS DD DSS Characteristic Values J min. typ. max. 150 2 800 DSS I = D25 R = 0.24 DS(on) t 250 ns rr ISOPLUS 247 TM E153432 ...
Page 2
... Test Conditions IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values J min. typ. max. DSS D T DSS D T Characteristic Values J min. typ. max. R 4,835,592 4,881,106 4,850,072 4,931,844 ...