IXFK170N20P IXYS, IXFK170N20P Datasheet - Page 4

• Manufacturer Part Number: IXFK170N20P
• Description: MOSFET N-CH 200V 170A TO-264
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFK170N20P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 170A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 185nC @ 10V
• Input Capacitance (ciss) @ Vds: 11400pF @ 25V
• Power - Max: 1250W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 170
• Rds(on), Max, Tj=25°c, (?): 0.014
• Ciss, Typ, (pf): 11.4
• Qg, Typ, (nc): 185
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 1250
• Rthjc, Max, (ºc/w): 0.12
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
1,000
350
300
250
200
150
100
180
160
140
120
100
100
50
10
80
60
40
20
0
0
0.3
4.0
0
f
0.4
= 1 MHz
4.5
5
0.5
Fig. 9. Forward Voltage Drop of
T
J
0.6
5.0
10
= 150ºC
Fig. 7. Input Admittance
Fig. 11. Capacitance
0.7
5.5
Intrinsic Diode
15
V
V
V
0.8
DS
SD
GS
- Volts
- Volts
- Volts
0.9
6.0
20
T
T
J
J
1.0
= 150ºC
= 25ºC
6.5
25
- 40ºC
25ºC
1.1
C iss
C oss
C rss
7.0
1.2
30
1.3
7.5
35
1.4
8.0
40
1.5
1,000.0
100.0
10.0
140
120
100
1.0
0.1
10
80
60
40
20
9
8
7
6
5
4
3
2
1
0
0
10
0
0
Fig. 12. Forward-Bias Safe Operating Area
R
DS(on)
T
T
Single Pulse
V
I
I
J
C
D
G
20
DS
= 175ºC
20
= 25ºC
= 85A
= 10mA
= 100V
Limit
40
40
Fig. 8. Transconductance
60
Fig. 10. Gate Charge
Q
60
G
V
- NanoCoulombs
DS
80
I
D
- Volts
80
100
- Amperes
100
100
T
J
120
= - 40ºC
25µs
100µs
1ms
10ms
100ms
DC
IXFK170N20P
IXFX170N20P
120
140
25ºC
140
150ºC
160
160
180
1000
180
200