IXFR66N50Q2 IXYS, IXFR66N50Q2 Datasheet - Page 4

• Manufacturer Part Number: IXFR66N50Q2
• Description: MOSFET N-CH 500V 50A ISOPLUS247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFR66N50Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 33A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 5.5V @ 8mA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 9125pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.074 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 50 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.085
• Ciss, Typ, (pf): 9125
• Qg, Typ, (nc): 200
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: ISOPLUS247™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100000
10000
180
160
140
120
100
100
1000
80
60
40
20
90
80
70
60
50
40
30
20
10
100
0
0
0.4
3.0
0
0.5
3.5
f
5
T
= 1MHz
J
0.6
Fig. 11. Capacitance
= 125
Fig. 7. Input Admittance
Fig. 9. Source Current vs.
Source-To-Drain Voltage
4.0
10
T
0.7
°
J
C
4.5
= 125
V
V
15
G S
S D
- 40
V
25
0.8
D S
°
- Volts
°
°
- Volts
5.0
C
C
C
20
- Volts
0.9
T
J
= 25
C
C
C
5.5
oss
25
rss
iss
1.0
°
C
6.0
30
1.1
6.5
35
1.2
1.3
7.0
40
1.000
0.100
0.010
0.001
90
80
70
60
50
40
30
20
10
10
0.0001
0
9
8
7
6
5
4
3
2
1
0
0
0
Fig. 12. Maximum Transient Thermal
V
I
I
D
G
20
DS
= 33A
= 10mA
20
0.001
= 250V
Fig. 8. Transconductance
40
Fig. 10. Gate Charge
Pulse Width - Seconds
40
60
Q
Impedance
G
0.01
I
80
- nanoCoulombs
D
60
- Amperes
IXFR66N50Q2
100 120 140 160 180 200
80
0.1
IXYS REF: F_66N50Q2 (94) 05-28-08-C
100
T
125
J
= - 40
1
25
°
C
120
°
C
°
C
140
10