IXFX44N80P IXYS, IXFX44N80P Datasheet - Page 2

MOSFET N-CH 800V 44A PLUS247

IXFX44N80P

Manufacturer Part Number
IXFX44N80P
Description
MOSFET N-CH 800V 44A PLUS247
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFX44N80P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
198nC @ 10V
Input Capacitance (ciss) @ Vds
12000pF @ 25V
Power - Max
1040W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
44 A
Power Dissipation
1200 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
44
Rds(on), Max, Tj=25°c, (?)
0.19
Ciss, Typ, (pf)
12000
Qg, Typ, (nc)
198
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
1200
Rthjc, Max, (ºc/w)
0.12
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
Note 1:
S
SM
I
d(on)
r
d(off)
f
rr
IXYS MOSFETs and IGBTs are covered by 4,835,592
IXYS reserves the right to change limits, test conditions, and dimensions.
RM
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
one or more of the following U.S. patents:
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= I
= 22 A, -di/dt = 100 A/μs
= 100 V, V
= 1 Ω (External)
= 20 V; I
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
= 0 V, Note 1
D
DS
DS
= 0.5 I
DS
GS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
= 0 V
4,850,072
4,881,106
D25
, Note 1
DSS
DSS
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 0.5 I
= I
(T
D25
T
J
J
= 25°C unless otherwise specified)
5,049,961
5,063,307
5,187,117
= 25°C unless otherwise specified)
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
27
Typ.
Typ.
0.15
910
198
0.8
8.0
43
12
30
28
22
75
27
67
65
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
0.12°C/W
100
250
1.5
44
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
μC
nF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
PLUS 247
TO-264 (IXFK) Outline
6,683,344
6,710,405B2
6,710,463
Dim.
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
Terminals: 1 - Gate
1
2
1
2
25.91
19.81
20.32
TM
20.80
15.75
19.81
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
Millimeter
5.46 BSC
5.45 BSC
Millimeter
(IXFX) Outline
6,727,585
6,759,692
6771478 B2
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
26.16
19.96
20.83
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
21.34
16.13
20.32
Max.
IXFK 44N80P
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
IXFX 44N80P
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
.215 BSC
Inches
Inches
Max.
1.030
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190

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