IXFR40N50Q2 IXYS, IXFR40N50Q2 Datasheet - Page 4

• Manufacturer Part Number: IXFR40N50Q2
• Description: MOSFET N-CH 500V 29A ISOPLUS247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFR40N50Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 170 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 29A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 25V
• Power - Max: 320W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.17 Ohms
• Forward Transconductance Gfs (max / Min): 28 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 29 A
• Power Dissipation: 320 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 29
• Rds(on), Max, Tj=25°c, (?): 0.17
• Ciss, Typ, (pf): 4850
• Qg, Typ, (nc): 110
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 320
• Rthjc, Max, (ºc/w): 0.39
• Package Style: ISOPLUS247™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q2467741A

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
10000
1000
120
110
100
100
50
45
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
5
0
0
0.4
3
0
f = 1MHz
0.5
T
3.5
5
J
= 125ºC
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Source Current vs.
-40ºC
Source-To-Drain Voltage
25ºC
0.6
10
T
J
4
= 125ºC
V
0.7
V
15
C rss
V
G S
S D
4.5
D S
C oss
- Volts
- Volts
0.8
C iss
20
- Volts
5
4,850,072
4,835,592
0.9
25
T
J
= 25ºC
5.5
30
1
4,931,844
4,881,106
6
1.1
35
5,034,796
5,017,508
6.5
1.2
40
5,049,961
5,063,307
1000
50
45
40
35
30
25
20
15
10
10
100
5
0
9
8
7
6
5
4
3
2
1
0
5,237,481
5,187,117
10
1
0
0
10
V
I
I
10
D
G
R
5
DS
T
= 20A
= 10mA
DS(on)
5,381,025
Fig. 8. Transconductance
5,486,715
J
10
= 250V
20
= -40ºC
125ºC
25ºC
Fig. 10. Gate Charge
Lim it
30
15
Fig. 12. Forw ar d-Bias
Safe Ope rating Are a
Q
G
6,306,728B1
6,404,065B1
40
20
I
- nanoCoulombs
D
D C
V
- Amperes
50
D S
25
IXFR40N50Q2
100
- V olts
60
30
6,162,665
6,259,123B1 6,306,728B1 6,683,344
70
35
80
40
6,534,343
T
T
J
C
90 100 110
45
= 150ºC
= 25ºC
100µs
1m s
25µs
10m s
50
6,583,505
1000
55