IXFR27N80Q IXYS, IXFR27N80Q Datasheet
IXFR27N80Q
Manufacturer Part Number
IXFR27N80Q
Description
MOSFET N-CH 800V 27A ISOPLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFR27N80Q.pdf
(2 pages)
Specifications of IXFR27N80Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
7600pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
27 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFR27N80Q
Manufacturer:
IXYS
Quantity:
200
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dV/dt, Low t
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
GSS
DSS
DM
AR
D25
DSS
GS(th)
J
JM
stg
L
DS(on)
DSS
DGR
GS
GSM
AR
AS
D
d
V
Note 1
V
V
Test Conditions
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque
V
V
S
GS
GS
DS
C
C
C
C
C
C
GS
J
J
J
GS
DS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
£ I
£ 150°C, R
= 25°C
= 0 V, I
= V
= 10 V, I
= ±20 V, V
= V
= 0 V
DM
GS
TM
, di/dt £ 100 A/ms, V
DSS
, I
D
D
= 250uA
= 4mA
D
= 0.5 • I
G
DS
= 2 W
= 0
TO-264
PLUS 247/ISOPLUS 247
TO-264
D25
GS
= 1 MW
DD
£ V
T
(T
J
J
DSS
= 125°C
= 25°C, unless otherwise specified)
JM
min.
800
IXFK 27N80Q
IXFR 27N80Q
IXFX 27N80Q
2.0
rr
Characteristic Values
-55 ... +150
-55 ... +150
0.4/6
Maximum Ratings
typ.
800
800
±20
±30
108
500
150
300
2.5
27
27
60
5
max.
Nm/lb.in.
±100 nA
300 mW
100 mA
4.5 V
10
6
2 mA
V/ns
mJ
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
J
g
g
PLUS 247
TO-264 AA (IXFK)
ISOPLUS 247
G = Gate
S = Source
Features
• IXYS advanced low Q
• Low gate charge and capacitances
• International standard packages
• Low R
• Rated for unclamped Inductive load
• Molding epoxies meet UL 94 V-0
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
• DC choppers
• AC motor control
• Temperature and lighting controls
Advantages
• PLUS 247
• Space savings
• High power density
- easier to drive
- faster switching
switching (UIS) rated
flammability classification
power supplies
mounting
E153432
V
I
R
t
D25
rr
DS (on)
DSS
DS(on)
G
TM
£ 250 ns
TM
D
(IXFX)
G
G
package for clip or spring
TM
D
D
(IXFR)
Isolated back surface*
S
= 800 V
=
= 300 mW
TAB = Drain
D = Drain
g
98722 (05/22/00)
process
27 A
(TAB)
1 - 2
(TAB)
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IXFR27N80Q Summary of contents
Page 1
... GSS DSS DS DSS 0.5 • I DS(on D25 Note 1 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q rr Maximum Ratings 800 = 1 MW 800 GS ±20 ±30 27 108 2.5 £ ...
Page 2
... S 13.21 13.72 .520 .540 T 15.75 16.26 .620 .640 U 1.65 3.03 .065 .080 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFR 27N80Q IXFX 27N80Q TO-264 AA (IXFK) Outline S pF ...