IXFK20N120 IXYS, IXFK20N120 Datasheet - Page 4

• Manufacturer Part Number: IXFK20N120
• Description: MOSFET N-CH 1200V 20A TO-264
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK20N120

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 160nC @ 10V
• Input Capacitance (ciss) @ Vds: 7400pF @ 25V
• Power - Max: 780W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.75 Ohms
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 780 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1200
• Id(cont), Tc=25°c, (a): 20
• Rds(on), Max, Tj=25°c, (?): 0.75
• Ciss, Typ, (pf): 7400
• Qg, Typ, (nc): 160
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 780
• Rthjc, Max, (ºc/w): 0.16
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
55
50
45
40
35
30
25
20
15
10
10
0.1
5
0
9
8
7
6
5
4
3
2
1
0
0
0
0
1
T
J
V
I
I
= -40ºC
20
D
G
125ºC
DS
Fig. 7. Transconductance
5
= 10A
= 10mA
25ºC
= 600V
40
Fig. 9. Gate Charge
10
Q
G
60
I
- nanoCoulombs
D
15
- Amperes
80
20
Fig. 11. Maxim um Transient Therm al Resistance
100
120
25
10
140
30
Pulse Width - milliseconds
160
35
10000
1000
100
70
60
50
40
30
20
10
10
0
0.4
0
f = 1MHz
5
0.6
Fig. 10. Capacitance
100
Fig. 8. Source Current vs.
Source-To-Drain Voltage
10
T
J
= 125ºC
15
V
0.8
V
S D
D S
- Volts
20
- Volts
IXFK 20N100
IXFX 20N100
1
C
C
25
oss
rss
T
C
J
= 25ºC
iss
30
1.2
35
1000
1.4
40