IXFK44N55Q IXYS, IXFK44N55Q Datasheet
IXFK44N55Q
Manufacturer Part Number
IXFK44N55Q
Description
MOSFET N-CH 550V 44A 0TO-264
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFK44N55Q.pdf
(2 pages)
Specifications of IXFK44N55Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
120 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
190nC @ 10V
Input Capacitance (ciss) @ Vds
6400pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.12 Ohms
Drain-source Breakdown Voltage
550 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
44 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
550
Id(cont), Tc=25°c, (a)
44
Rds(on), Max, Tj=25°c, (?)
0.12
Ciss, Typ, (pf)
6400
Qg, Typ, (nc)
190
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
481
Rthjc, Max, (ºc/w)
0.26
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFK44N55Q
Manufacturer:
IXYS
Quantity:
200
HiPerFET
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg
High dV/dt, Low t
Symbol
V
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
© 2002 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
GS(th)
DGR
GS
GSM
AR
AS
D
DSS
DS(on)
DSS
d
Test Conditions
V
V
Test Conditions
S
GS
DS
GS
GS
J
J
C
C
C
C
C
J
C
GS
DS
= V
= 0 V, I
DM
GS
rr
DSS
, I
TM
D
D
= 250uA
= 4mA
D
DS
G
D25
GS
Advance Technical Information
DD
J
J
DSS
JM
IXFK 44N55Q
IXFX 44N55Q
550
min.
2.5
Characteristic Values
Maximum Ratings
typ.
max.
4.5 V
V
G = Gate
S = Source
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
l
Advantages
l
l
l
TO-264 AA (IXFK)
PLUS 247
V
I
R
t
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Rated for unclamped Inductive load
switching (UIS) rated
Molding epoxies meet UL 94 V-0
flammability classification
D25
rr
DSS
DS(on)
DS (on)
250 ns
G
TM
TM
D
(IXFX)
G
D
=
=
=
S
D = Drain
TAB = Drain
550 V
120 m
g
44 A
process
98918 (04/02)
(TAB)
(TAB)
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IXFK44N55Q Summary of contents
Page 1
... Test Conditions 250uA DSS 4mA GS(th GSS DSS DS DSS GS R DS(on D25 © 2002 IXYS All rights reserved Advance Technical Information IXFK 44N55Q IXFX 44N55Q Maximum Ratings DSS Characteristic Values J min. typ. max. 550 2 550 V DSS D25 R = 120 m DS(on) t 250 ns rr ...
Page 2
... R thJC R thCK Source-Drain Diode Symbol Test Conditions IXYS reserves the right to change limits, test conditions, and dimensions. Characteristic Values J min. typ. max. DSS D D25 DSS D D25 Characteristic Values J min. typ. max IXFK 44N55Q IXFX 44N55Q PLUS 247 TM Outline Dim. Millimeter Inches Min ...