IXFR14N100Q2 IXYS, IXFR14N100Q2 Datasheet - Page 2

• Manufacturer Part Number: IXFR14N100Q2
• Description: MOSFET N-CH 1KV 9.5A ISOPLUS247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFR14N100Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 7A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 83nC @ 10V
• Input Capacitance (ciss) @ Vds: 2700pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 9.5
• Rds(on), Max, Tj=25°c, (?): 1.10
• Ciss, Typ, (pf): 2800
• Qg, Typ, (nc): 83
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 200
• Rthjc, Max, (ºc/w): 0.62
• Package Style: ISOPLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Note: Test current I
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
SM
RM
d(on)
d(off)
f
S
r
rr
fs
SD
iss
oss
g(on)
gd
thJC
thCK
RM
rss
gs
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
F
Test Conditions
V
GS
= I
I
DS
F
= 0 V
S
= I
, V
= 10 V; I
V
V
R
V
T
S
GS
GS
GS
= 7A
G
GS
, -di/dt = 100 A/µs, V
= 2 Ω (External),
= 0 V,
= 0 V, V
= 10 V, V
= 10 V, V
D
= I
4,835,592
4,850,072
4,881,106
T
DS
, pulse test
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
4,931,844
5,017,508
5,034,796
R
(T
= 100 V
(T
DSS
DSS
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
, I
, I
5,049,961
5,063,307
5,187,117
D
D
JM
= I
= I
T
T
min.
5,237,481
5,381,025
5,486,715
min.
Characteristic Values
10
Characteristic Values
2700
0.25
typ.
typ.
0.8
0.7
300
100
6,162,665
6,259,123 B1
6,306,728 B1
14
12
10
28
12
83
20
40
0.62
max.
max.
300
1.5
14
56
K/W
K/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
S
µC
n s
A
A
A
V
ISOPLUS247 Outline
6,683,344
6,710,405B2
6,710,463
IXFR14N100Q2
6,727,585
6,759,692