IXFH15N80 IXYS, IXFH15N80 Datasheet - Page 4

• Manufacturer Part Number: IXFH15N80
• Description: MOSFET N-CH 800V 15A TO-247AD
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH15N80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 4870pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.6 Ohms
• Forward Transconductance Gfs (max / Min): 14 s
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 15
• Rds(on), Max, Tj=25°c, (?): 0.6
• Ciss, Typ, (pf): 3965
• Qg, Typ, (nc): 150
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 298
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
0.001
50
40
30
20
10
12
10
Figure 9. Source Current vs. Source to Drain Voltage
0.01
0
8
6
4
2
0
0.2
0.1
0.00001
0
1
Figure 7. Gate Charge
0.4
V
D=0.2
D=0.02
D=0.01
D=0.5
D=0.1
D=0.05
DS
50
I
I
D
G
= 400V
= 14A
= 1mA
Gate Charge - nC
0.6
V
100
SD
T
J
- Volts
0.8
= 125
0.0001
Single pulse
150
O
C
1.0
T
J
Figure 11. Transient Thermal Resistance
= 25
200
O
1.2
C
D = Duty Cycle
1.4
250
0.001
Pulse Width - Seconds
4,835,592
4,850,072
4,881,106
4,931,844
5000
2500
1000
500
250
100
50
0.01
0
5,017,508
5,034,796
Figure 8. Capacitance Curves
5
10
Coss
Ciss
Crss
5,049,961
5,063,307
15
V
DS
- Volts
20
0.1
5,187,117
5,237,481
25
f = 1MHz
IXFH 14N80
IXFH 15N80
30
5,486,715
5,381,025
35
40
6,306,728B1
1