IXTT50N30 IXYS, IXTT50N30 Datasheet
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IXTT50N30
Specifications of IXTT50N30
Related parts for IXTT50N30
IXTT50N30 Summary of contents
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... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved Advance Technical Information IXTH 50N30 IXTT 50N30 Maximum Ratings 300 = 1 MΩ 300 GS ±20 ±30 50 200 1.5 ≤ DSS 400 -55 ...
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... I = 25A rr F -di/dt = 100 A/µ 100V RM R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. Max. , pulse test ...
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... Volts DS Fig. 3. Output Characteristics @ 125 Deg Volts DS Fig Normalized to I DS(on) Value vs 25º Amperes D © 2003 IXYS All rights reserved 2 D25 25º IXTH 50N30 IXTT 50N30 Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Normalized to I DS(on) ...
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... iss 1 000 C oss C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 25º 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 ...