IXFH13N100 IXYS, IXFH13N100 Datasheet
IXFH13N100
Manufacturer Part Number
IXFH13N100
Description
MOSFET N-CH 1000V 12.5A TO-247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH13N100.pdf
(4 pages)
Specifications of IXFH13N100
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
900 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
12.5A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
155nC @ 10V
Input Capacitance (ciss) @ Vds
4000pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.9 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12.5 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
12.5
Rds(on), Max, Tj=25°c, (?)
0.9
Ciss, Typ, (pf)
4000
Qg, Typ, (nc)
122
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
300
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH13N100
Manufacturer:
IXYS
Quantity:
15 500
© 2000 IXYS All rights reserved
HiPerFET
Power MOSFETs
IXYS reserves the right to change limits, test conditions, and dimensions.
N-Channel Enhancement Mode
High dv/dt, Low t
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
DM
AR
GSS
DSS
D25
L
J
JM
stg
DSS
GS(th)
DSS
DGR
GS
GSM
AR
D
DS(on)
d
Test Conditions
V
V
V
V
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
V
I
T
C
C
C
C
S
C
J
J
GS
DS
GS
DS
GS
J
GS
£ I
£ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0 V, I
= V
= ±20 V
= 0.8 • V
= 0 V
= 10 V, I
TM
DM
, di/dt £ 100 A/ms, V
GS
rr
, HDMOS
, I
D
D
DC
D
= 3 mA
DSS
= 4 mA
, V
G
= 0.5 • I
= 2 W
DS
= 0
D25
TM
GS
= 1 MW
Family
DD
T
T
J
J
£ V
= 25°C
= 125°C
(T
10N100
12N100
13N100
DSS
J
= 25°C, unless otherwise specified)
JM
,
TO-204 = 18 g, TO-247 = 6 g
IXFH/IXFM 10 N100
IXFH/IXFM 12 N100
IXFH 13 N100
10N100
12N100
13N100
10N100
12N100
13N100
10N100
12N100
13N100
1000
min.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
1.13/10 Nm/lb.in.
1000
1000
12.5
12.5
±20
±30
300
150
300
10
12
40
48
50
10
12
30
5
max.
±100
1.20
1.05
0.90
250
4.5
1
V/ns
mA
mJ
nA
mA
°C
°C
°C
°C
W
W
W
V
V
W
V
V
V
V
A
A
A
A
A
A
A
A
A
G = Gate,
S = Source,
Features
Applications
Advantages
TO-247 AD (IXFH)
TO-204 AA (IXFM)
International standard packages
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
1000 V
1000 V
1000 V 12.5 A 0.90 W
t
V
rr
DSS
£ 250 ns
DS (on)
HDMOS
D
D = Drain,
TAB = Drain
10 A 1.20 W
12 A 1.05 W
I
D25
TM
G
process
91531F(4/99)
R
DS(on)
1 - 4
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IXFH13N100 Summary of contents
Page 1
... DS DSS 0.5 • I DS(on Pulse test, t £ 300 ms, duty cycle d £ IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXFH/IXFM 10 N100 IXFH/IXFM 12 N100 IXFH 13 N100 TM Family Maximum Ratings 1000 = 1 MW 1000 GS ±20 ±30 ...
Page 2
... T = 25° 125° 25° 125° 25° 125° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXFH 12N100 IXFH 13N100 TO-247 AD (IXFH) Outline 100 155 nC Dim. Millimeter Min. Max. ...
Page 3
... V = 10V GS 1.1 1.0 0 Amperes D Fig. 5 Drain Current vs. Case Temperature 12N100 12 10 10N100 -50 - Degrees C C © 2000 IXYS All rights reserved IXFH 10N100 IXFM 10N100 IXFM 12N100 V = 10V 15V 100 125 150 IXFH 12N100 IXFH 13N100 Fig. 2 Input Admittance 25° ...
Page 4
... Fig.10 Transient Thermal Impedance 1 D=0.5 0.1 D=0.2 D=0.1 D=0.05 0.01 D=0.02 D=0.01 Single Pulse 0.001 0.00001 0.0001 © 2000 IXYS All rights reserved IXFH 10N100 IXFM 10N100 IXFM 12N100 100 125 150 15 20 0.001 0.01 Time - Seconds IXFH 12N100 IXFH 13N100 Limited by R ...