IXTK62N25 IXYS, IXTK62N25 Datasheet - Page 4

• Manufacturer Part Number: IXTK62N25
• Description: MOSFET N-CH 250V 62A TO-264
• Manufacturer: IXYS
• Series: MegaMOS™r

Specifications of IXTK62N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 240nC @ 10V
• Input Capacitance (ciss) @ Vds: 5400pF @ 25V
• Power - Max: 390W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.035 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 62 A
• Power Dissipation: 390 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 62
• Rds(on), Max, Tj=25°c, (?): 0.035
• Ciss, Typ, (pf): -
• Qg, Typ, (nc): 67
• Trr, Typ, (ns): -
• Pd, (w): -
• Rthjc, Max, (k/w): -
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
10000
1000
150
120
180
150
120
100
90
60
30
90
60
30
0
0
3.5
0.4
0
Fig. 9. Source Current vs. Source-To-
0.5
f = 1MHz
5
T
T
J
J
Fig. 11. Capacitance
= 125ºC
Fig. 7. Input Adm ittance
= 125ºC
0.6
4.5
10
-40ºC
25ºC
0.7
Drain Voltage
V
V
15
V
G S
S D
4,835,592
4,850,072
D S
0.8
- Volts
- Volts
5.5
20
- Volts
0.9
T
J
4,881,106
4,931,844
= 25ºC
25
C iss
C oss
C rss
1
6.5
30
5,034,796
1.1
5,017,508
1.2
35
5,049,961
5,063,307
7.5
1.3
40
5,187,117
5,237,481
1000
100
100
10
90
80
70
60
50
40
30
20
10
10
1
0
9
8
7
6
5
4
3
2
1
0
5,486,715
5,381,025
1
0
0
T
T
T
J
V
I
I
J
C
D
G
= -40ºC
R
DS
= 150
Fig. 8. Transconductance
125ºC
= 25
6,162,665
= 31A
6,259,123 B1 6,404,065 B1
= 10mA
DS(on)
30
25ºC
= 125V
50
Fig. 12. Forw ard-Bias
Fig. 10. Gate Charge
Safe Operating Area
º
º
C
Limit
C
Q
10
60
6,306,728 B1 6,534,343
G
I
- nanoCoulombs
100
V
D
D S
- Amperes
DC
90
- Volts
6,583,505
150
IXTK 62N25
120
100
6,683,344
6,710,405B2
200
150
100µs
1ms
10ms
25µs
1000
180
250