IXFX73N30Q IXYS, IXFX73N30Q Datasheet

MOSFET N-CH 300V 73A PLUS247

IXFX73N30Q

Manufacturer Part Number
IXFX73N30Q
Description
MOSFET N-CH 300V 73A PLUS247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFX73N30Q

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
45 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
73A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
195nC @ 10V
Input Capacitance (ciss) @ Vds
5400pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
PLUS247™-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.045 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
73 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
73
Rds(on), Max, Tj=25°c, (?)
0.042
Ciss, Typ, (pf)
6400
Qg, Typ, (nc)
190
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
481
Rthjc, Max, (ºc/w)
0.26
Package Style
PLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFX73N30Q
Manufacturer:
IXYS
Quantity:
6 285
HiPerFET
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,
High dV/dt, Low t
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
© 2003 IXYS All rights reserved
Symbol
V
V
I
I
R
DM
D25
AR
GSS
DSS
JM
L
AR
AS
J
stg
DSS
DGR
GS
GSM
D
DSS
GS(th)
d
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in.) from case for 10 s
Mounting torque (TO-264)
PLUS 247
TO-264
Test Conditions
V
V
V
V
V
V
Note 1
S
C
C
C
C
C
C
J
J
J
GS
DS
GS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= V
= 0 V, I
= 10 V, I
= V
= 0 V
= ±30 V, V
DM
rr
GS
, di/dt ≤ 100 A/µs, V
DSS
TM
, I
D
D
= 1mA
= 4mA
D
G
= 0.5 • I
DS
= 2 Ω
= 0
D25
GS
= 1 MΩ
DD
(T
T
≤ V
J
J
= 25°C, unless otherwise specified)
= 125°C
DSS
IXFK 73N30Q
IXFX 73N30Q
JM
300
min.
2.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
0.4/6 Nm/lb.in.
300
300
±30
±40
292
500
150
300
2.5
73
73
60
10
10
6
max.
±100 nA
45 mΩ
25 µA
4.0 V
2 mA
V/ns
mJ
° C
° C
° C
°C
W
V
V
A
A
A
V
V
g
V
g
J
Features
Applications
Advantages
TO-264 (IXFK)
G = Gate
S = Source
Temperature and lighting controls
PLUS 247
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Rated for unclamped Inductive load
switching (UIS) rated
Molding epoxies meet UL 94 V-0
flammability classification
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
PLUS 247
mounting
Space savings
High power density
DS (on)
V
I
R
G
D25
TM
TM
DSS
DS(on)
G
D
(IXFX)
package for clip or spring
D
t
rr
S
≤ ≤ ≤ ≤ ≤ 250 ns
= 300 V
= 73
= 45 mΩ Ω Ω Ω Ω
D = Drain
TAB = Drain
DS98870B(08/03)
g
process
(TAB)
(TAB)
A

Related parts for IXFX73N30Q

IXFX73N30Q Summary of contents

Page 1

... GS(th ± GSS DSS DS DSS 0.5 • I DS(on D25 Note 1 © 2003 IXYS All rights reserved IXFK 73N30Q IXFX 73N30Q Maximum Ratings 300 = 1 MΩ 300 GS ±30 ±40 73 292 2.5 ≤ DSS 500 -55 ... +150 150 -55 ... +150 300 0.4/6 Nm/lb.in Characteristic Values (T = 25° ...

Page 2

... A/µ Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min ...

Page 3

... DS Fig. 3. Output Characteristics @ 125 Deg Volts DS Fig Norm alized to I DS(on) Value vs 2.8 GS 2.5 2 25º 0 Amperes D © 2003 IXYS All rights reserved 2 D25 25º IXFK 73N30Q IXFX 73N30Q Fig. 2. Extended Output Characteristics @ 25 deg Volts DS Fig Norm alized to I Value vs ...

Page 4

... Fig. 11. Capacitance 1 0000 C iss C 1 000 oss C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 25º 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 ...

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