IXFH36N55Q2 IXYS, IXFH36N55Q2 Datasheet - Page 5

• Manufacturer Part Number: IXFH36N55Q2
• Description: MOSFET N-CH 550V 36A TO-247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH36N55Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 550V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 4100pF @ 25V
• Power - Max: 560W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.18 Ohms
• Drain-source Breakdown Voltage: 550 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 560 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 550
• Id(cont), Tc=25°c, (a): 36
• Rds(on), Max, Tj=25°c, (?): 0.18
• Ciss, Typ, (pf): 4100
• Qg, Typ, (nc): 110
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXFH36N55Q2
Fig. 13. Maxim um Transient Therm al Resistance
1.000
0.100
0.010
0.001
0.1
1
10
100
1000
10000
Pulse Width - milliseconds
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