IXTH24N50L IXYS, IXTH24N50L Datasheet - Page 4

• Manufacturer Part Number: IXTH24N50L
• Description: MOSFET N-CH 500V 24A TO-247
• Manufacturer: IXYS

Specifications of IXTH24N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 500mA, 20V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 160nC @ 20V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 24 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 24
• Rds(on), Max, Tj=25°c, (?): 0.3
• Ciss, Typ, (pf): 2500
• Qg, Typ, (nc): 160
• Trr, Typ, (ns): 500
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10000
1000
100
35
30
25
20
15
10
80
70
60
50
40
30
20
10
10
5
0
0
0.4
4
0
f = 1MHz
5
0.5
5
Fig. 11. Capacitance
Fig. 9. Source Current vs.
Source-To-Drain Voltage
T
10
Fig. 7. Input Admittance
6
0.6
J
= 125ºC
T
15
V
7
V
J
= 125ºC
G S
V
0.7
S D
D S
- 40ºC
25ºC
- Volts
- Volts
20
8
- Volts
C
C
C
iss
oss
rss
0.8
25
9
0.9
T
J
30
1 0
= 25ºC
1
35
1 1
1.1
40
1 2
14
12
10
0.01
20
18
16
14
12
10
8
6
4
2
0
0.1
8
6
4
2
0
0.0001
1
0
0
T
J
= - 40ºC
Fig. 12. Maximum Transient Thermal
20
125ºC
V
I
I
D
G
25ºC
5
DS
= 12A
= 10mA
Fig. 8. Transconductance
= 250V
0.001
40
10
Fig. 10. Gate Charge
Q
Pulse Width - second
G
60
Impedance
I
- nanoCoulombs
D
15
- Amperes
0.01
80
IXTH24N50L
20
100
25
120
0.1
30
140
160
35
1