IXTH12N100L IXYS, IXTH12N100L Datasheet - Page 5

• Manufacturer Part Number: IXTH12N100L
• Description: MOSFET N-CH 1000V 12A TO-247
• Manufacturer: IXYS

Specifications of IXTH12N100L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.3 Ohm @ 500mA, 20V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 155nC @ 20V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.3 Ohms
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 12 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 12
• Rds(on), Max, Tj=25°c, (?): 1.3
• Ciss, Typ, (pf): 2500
• Qg, Typ, (nc): 155
• Trr, Typ, (ns): 1000
• Pd, (w): 400
• Rthjc, Max, (k/w): 0.31
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2010 IXYS CORPORATION, All Rights Reserved
100
0.1
10
1
10
T
T
Single Pulse
J
C
R
= 150ºC
= 25ºC
DS(on)
Fig. 13. Forward-Bias Safe Operating Area
Limit
100
@ T
V
DS
- Volts
C
= 25ºC
DC
1,000
25µs
100µs
1ms
10ms
10,000
100
0.1
10
1
10
T
T
Single Pulse
R
J
C
DS(on)
= 150ºC
= 60ºC
Fig. 14. Forward-Bias Safe Operating Area
Limit
100
@ T
V
DS
C
- Volts
= 60ºC
IXTH12N100L
DC
1,000
25µs
100µs
1ms
10ms
IXYS REF: T_12N100L(7N)4-19-10-A
10,000