IXFX170N20P IXYS, IXFX170N20P Datasheet - Page 5

• Manufacturer Part Number: IXFX170N20P
• Description: MOSFET N-CH PLUS247
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFX170N20P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 170A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 185nC @ 10V
• Input Capacitance (ciss) @ Vds: 11400pF @ 25V
• Power - Max: 1250W
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 170
• Rds(on), Max, Tj=25°c, (?): 0.014
• Ciss, Typ, (pf): 11.4
• Qg, Typ, (nc): 185
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 1250
• Rthjc, Max, (ºc/w): 0.12
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1.000
0.100
0.010
0.001
0.00001
0.0001
Fig. 13. Maximum Transient Thermal Impedance
0.001
Pulse Width - Seconds
0.01
0.1
1
IXFK170N20P
IXFX170N20P
IXYS REF: T_170N20P(93)7-16-08
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