IXFR32N50Q IXYS, IXFR32N50Q Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFR32N50Q
Manufacturer Part Number
IXFR32N50Q
Description
MOSFET N-CH 500V 30A ISOPLUS247
Specifications of IXFR32N50Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4.5V @ 4mA
Gate Charge (qg) @ Vgs
150nC @ 10V
Input Capacitance (ciss) @ Vds
3950pF @ 25V
Power - Max
310W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
310 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.16
Ciss, Typ, (pf)
3950
Qg, Typ, (nc)
150
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
313
Rthjc, Max, (ºc/w)
0.40
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
HiPerFET
ISOPLUS247
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
High dV/dt, Low t
Symbol
V
V
I
I
R
© 2004 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
V
Weight
D25
DM
AR
GSS
DSS
J
JM
stg
L
GS(th)
DGR
GS
GSM
AS
AR
D
ISOL
DSS
DSS
DS(on)
V
V
V
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
Test Conditions
V
V
V
Notes 1, 2
S
C
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
TM
= V
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, Pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
≤ 150°C, R
= 25°C
= 0 V, I
= V
= 0 V
= ±20 V
= 10 V, I
DM
Power MOSFETs
GS
rr
DSS
, di/dt ≤ 100 A/µs, V
, HDMOS
, I
TM
D
D
= 1mA
= 4mA
DC
D
, V
= I
G
= 2 Ω
DS
T
t = 1 minute leads-to-tab
= 0
TM
GS
Family
= 1 MΩ
DD
(T
≤ V
T
T
J
J
J
= 25°C, unless otherwise specified)
DSS
= 25°C
= 125°C
JM
500
min.
2.5
Characteristic Values
IXFR 32N50Q V
-55 ... +150
-55 ... +150
Maximum Ratings
typ.
2500
500
500
±20
±30
120
310
150
300
1.5
30
30
45
6
5
max.
±100
0.16
100
4.5
1
V/ns
mA
mJ
µA
°C
°C
°C
°C
V~
nA
W
Ω
A
A
A
V
V
V
V
V
V
g
J
Features
Applications
Advantages
ISOPLUS 247
G = Gate
S = Source
* Patent pending
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
AC motor control
I
R
t
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly
Space savings
High power density
rr
D25
DS(on)
DSS
E 153432
DS (on)
G
D
HDMOS
TM
=
=
= 0.16 Ω Ω Ω Ω Ω
=
D = Drain
Isolated back surface*
TM
250 ns
500 V
DS98608D(01/04)
30 A
process
Related parts for IXFR32N50Q
IXFR32N50Q Summary of contents
... ± GSS DSS DS DSS DS(on Notes 1, 2 © 2004 IXYS All rights reserved IXFR 32N50Q V Family Maximum Ratings 500 = 1 MΩ 500 GS ±20 ±30 30 120 JM 30 1.5 45 ≤ DSS 310 -55 ... +150 150 -55 ... +150 300 2500 6 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... I = 16A T T Note: 2. Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... V - Volts DS Figure 3. R normalized to 15A/25 DS(on) 2 10V GS 2.4 0 Tj=125 C 2.0 1.6 Tj=25 1.2 0 Amperes D Figure 5. Drain Current vs. Case Temperature -50 - Degrees C C © 2004 IXYS All rights reserved vs 100 125 150 IXFR 32N50Q Figure 2. Output Characteristics at 125 125 Volts DS Figure 4. R normalized to 15A/25 DS(on) 2 ...
... SD Figure 10. Transient Thermal Resistance 0.60 0.40 0.20 0.10 0.08 0.06 0.04 0.02 0. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 10000 1000 100 200 250 1.0 1.2 ...
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