IXFH12N100Q IXYS, IXFH12N100Q Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXFH12N100Q
Manufacturer Part Number
IXFH12N100Q
Description
MOSFET N-CH 1000V 12A TO-247AD
Specifications of IXFH12N100Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.05 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
5.5V @ 4mA
Gate Charge (qg) @ Vgs
90nC @ 10V
Input Capacitance (ciss) @ Vds
2900pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
12
Rds(on), Max, Tj=25°c, (?)
1.05
Ciss, Typ, (pf)
2900
Qg, Typ, (nc)
90
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
300
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
HiPerFET
Power MOSFETs
Q Class
N-Channel Enhancement Mode
Avalanche Rated
Low Q
Symbol
V
V
I
I
R
© 2002 IXYS All rights reserved
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
M
Weight
GSS
DSS
DM
D25
AR
J
JM
stg
L
DSS
GS(th)
DS(on)
DGR
GS
GSM
AR
D
DSS
d
g
, High dv/dt
Test Conditions
V
V
V
V
V
V
Pulse test, t
Test Conditions
T
T
Continuous
Transient
T
T
pulse width limited by T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
S
GS
DS
GS
DS
GS
GS
J
J
C
C
C
C
J
C
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C,
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
150 C, R
I
TM
DM
GS
, di/dt 100 A/ s, V
, I
D
D
DC
D
= 3 mA
= 4 mA
DSS
, V
= 0.5 I
300 s, duty cycle d
G
= 2
DS
= 0
D25
GS
JM
= 1 M
DD
(T
T
T
12N100Q
10N100Q
IXFH/IXFT12N100Q
IXFH/IXFT10N100Q
J
J
J
V
= 25 C
= 125 C
12N100Q
10N100Q
12N100Q
10N100Q
12N100Q
10N100Q
= 25 C, unless otherwise specified)
DSS
,
TO-247 AD
TO-268
2 %
1000
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
300
300
Maximum Ratings
typ.
1000
1000
1.13/10 Nm/lb.in.
12
10
48
40
12
10
20
30
30
5
150
6
4
1.05
1.20
100
max.
5.5
50
1
V/ns
mJ
mA
W
nA
g
g
C
C
C
C
V
V
V
V
V
V
A
A
A
A
A
A
A
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
G = Gate
S = Source
Features
Advantages
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
Space savings
High power density
1000 V 12 A 1.05
1000 V 10 A 1.20
t
rr
V
DSS
DS (on)
250 ns
G
I
S
D25
TAB = Drain
D
= Drain
g
process
97539D(12/02)
R
DS(on)
(TAB)
Related parts for IXFH12N100Q
IXFH12N100Q Summary of contents
... GS(th GSS 0.8 • V DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 2002 IXYS All rights reserved IXFH/IXFT12N100Q IXFH/IXFT10N100Q Maximum Ratings 1000 = 1 M 1000 12N100Q 12 10N100Q 10 12N100Q 48 10N100Q 40 JM 12N100Q 12 10N100Q DSS 300 -55 ... +150 150 -55 ... +150 300 1 ...
... Pulse test, t 300 s, duty cycle -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. , pulse test 4 10 2900 315 50 ...
... Figure 1. Output Characteristics 10V 2 125 J 1.8 1.6 1 1.2 J 1.0 0 Amperes D Figure 3. R normalized to value at I DS(on -50 - Degrees C C Figure 5. Drain Current vs. Case Temperature © 2002 IXYS All rights reserved = 10V 12A D 75 100 125 150 IXFH/IXFT 12N100Q IXFH/IXFT 10N100Q 10V T = 125 ...
... D=0.2 D=0.1 D=0.05 Single pulse D=0.02 0.01 D=0.01 0.001 - IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 5000 2500 1000 500 250 100 50 80 100 100 ...
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