IXFK16N90Q IXYS, IXFK16N90Q Datasheet
IXFK16N90Q
Manufacturer Part Number
IXFK16N90Q
Description
MOSFET N-CH 900V 16A TO-264AA
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFT16N90Q.pdf
(2 pages)
Specifications of IXFK16N90Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
650 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
170nC @ 10V
Input Capacitance (ciss) @ Vds
4000pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.65 Ohms
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
900
Id(cont), Tc=25°c, (a)
16
Rds(on), Max, Tj=25°c, (?)
0.65
Ciss, Typ, (pf)
4000
Qg, Typ, (nc)
133
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
357
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFK16N90Q
Manufacturer:
IXYS
Quantity:
200
HiPerFET
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Preliminary Data
Symbol
V
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
© 2002 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
GS(th)
DGR
GS
GSM
AR
AS
D
DSS
DS(on)
DSS
d
Test Conditions
V
V
V
V
V
V
Pulse test, t
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
S
GS
GS
GS
GS
J
J
C
C
C
C
C
J
C
DS
DS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= V
= 0 V
= 10 V, I
I
150 C, R
DM
TM
GS
DSS
, di/dt 100 A/ s, V
, I
D
D
DC
D
= 250 A
= 4 mA
, V
= 0.5 • I
300 s, duty cycle d
G
= 2
DS
g
, High dv/dt
= 0
D25
GS
= 1 M
DD
T
T
(T
J
J
J
= 25 C
= 125 C
V
= 25 C, unless otherwise specified)
DSS
,
JM
2 %
TO-247
TO-264
TO-268
TO-264
TO-247
IXFH 16N90Q
IXFK 16N90Q
IXFT 16N90Q
min.
900
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
0.9/6 Nm/lb.in.
900
900
360
150
300
1.5
20
30
16
64
16
45
10
5
6
4
max.
0.65
200
5.0
50
2
V/ns
mA
mJ
nA
W
V
V
V
V
V
V
A
A
A
C
A
C
C
C
g
g
g
J
TO-247 AD (IXFH)
TO-268 (D3) ( IXFT)
TO-264 AA (IXFK)
G = Gate
S = Source
Features
Advantages
IXYS advanced low Q
International standard packages
classification
Low R
Avalanche energy and current rated
Fast intrinsic rectifier
Easy to mount
Space savings
High power density
Epoxy meet UL 94 V-0, flammability
V
I
R
t
D25
rr
DSS
DS(on)
DS (on)
250 ns
G
G
low Q
D
S
=
=
= 0.65
S
g
TAB = Drain
DS98668A(12/02)
g
900 V
process
16 A
D (TAB)
(TAB)
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IXFK16N90Q Summary of contents
Page 1
... GSS DSS DS DSS 0.5 • I DS(on D25 Pulse test, t 300 s, duty cycle d © 2002 IXYS All rights reserved IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Maximum Ratings 900 = 1 M 900 1 DSS 360 -55 ... +150 150 -55 ... +150 300 TO-247 1.13/10 Nm/lb.in. TO-264 0.9/6 Nm/lb.in. ...
Page 2
... I -di/dt = 100 TO-268 Outline IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: IXFH 16N90Q IXFK 16N90Q IXFT 16N90Q Characteristic Values ( unless otherwise specified) J min. typ. max. ...