IXFJ32N50Q IXYS, IXFJ32N50Q Datasheet - Page 2

• Manufacturer Part Number: IXFJ32N50Q
• Description: MOSFET N-CH 500V 32A TO-220
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFJ32N50Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 153nC @ 10V
• Input Capacitance (ciss) @ Vds: 3950pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.15 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 32 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 32
• Rds(on), Max, Tj=25°c, (?): 0.16
• Ciss, Typ, (pf): 3950
• Qg, Typ, (nc): 153
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 357
• Rthjc, Max, (ºc/w): 0.35
• Package Style: TO-268 (I3 - PAK)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
S
SM
RM
d(on)
d(off)
f
r
rr
fs
SD
oss
thJC
thCK
iss
rss
g(on)
gs
gd
rr
Test Conditions
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
Pulse test, t £ 300 ms, duty cycle d £ 2 %
F
DS
GS
= I
I
F
= 0 V
S
= 10 V; I
V
V
R
V
= I
, V
GS
GS
G
GS
S
= 2 W (External)
GS
-di/dt = 100 A/ms, V
= 0 V, V
= 10 V, V
= 10 V, V
= 0 V,
D
= 0.5 I
DS
DS
DS
= 25 V, f = 1 MHz
D25
= 0.5 • V
= 0.5 • V
JM
, pulse test
R
= 100 V
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
DSS
DSS
(T
(T
, I
, I
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
D
D
= 0.5 I
= 0.5 I
4,881,106
4,931,844
D25
D25
min.
min.
18
Characteristic Values
Characteristic Values
5,017,508
5,034,796
0.75
3950
typ.
typ.
0.25
7.5
640
210
153
28
35
42
75
20
26
85
0.35
max.
max.
250
5,049,961
5,063,307
128
1.5
32
K/W
K/W
nC
nC
nC
mC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
5,187,117
5,237,481
TO-268 Outline
5,486,715
5,381,025
Dim.
A
A1
b
b2
C
C2
D
D1
E
E1
e
H
L
L1
L2
Min
.193
.106
.045
.075
.016
.057
.543
.488
.624
.524
.215 BSC
1.365
.780
.079
.039
Inches
All metal area are
solder plated
1 - gate
2 - drain (collector)
3 - source (emitter)
4 - drain (collector)
IXFJ 32N50Q
Max
.201
.114
.057
.083
.026
.063
.551
.500
.632
.535
1.395 34.67 35.43
.800
.091
.045
Min
4.90
2.70
1.15
1.90
.040
1.45
13.80 14.00
12.40 12.70
15.85 16.05
13.30 13.60
5.45 BSC
19.81 20.32
2.00
1.00
Millimeters
Max
5.10
2.90
1.45
2.10
.065
1.60
2.30
1.15
2 - 4