IXTH90P10P IXYS, IXTH90P10P Datasheet - Page 3

• Manufacturer Part Number: IXTH90P10P
• Description: MOSFET P-CH 100V 90A TO-247
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTH90P10P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 5800pF @ 25V
• Power - Max: 462W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): -100.0
• Id(cont), Tc=25°c, (a): -90.0
• Rds(on), Max, Tj=25°c, (?): 0.025
• Ciss, Typ, (pf): 5800
• Qg, Typ, (nc): 120
• Trr, Typ, (ns): 144
• Pd, (w): 462
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
-90
-80
-70
-60
-50
-40
-30
-20
-10
-90
-80
-70
-60
-50
-40
-30
-20
-10
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
0
0.0
0.0
0
-0.2
Fig. 5. R
V
-0.5
-20
GS
= -10V
-0.4
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
-40
-1.0
-0.6
DS(on)
-60
-0.8
-1.5
Drain Current
Normalized to I
I
D
V
V
@ 125ºC
-1.0
@ 25ºC
-80
DS
DS
- Amperes
-2.0
- Volts
V
- Volts
V
GS
-1.2
GS
-100
= -10V
= -10V
- 9V
-2.5
-1.4
- 9V
-120
D
-1.6
-3.0
= - 45A vs.
T
J
-140
T
= 125ºC
-1.8
J
- 8V
- 7V
- 6V
- 5V
= 25ºC
- 8V
- 7V
- 6V
- 5V
-3.5
-160
-2.0
-2.2
-4.0
-180
-240
-220
-200
-180
-160
-140
-120
-100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-100
-80
-60
-40
-20
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0
-50
0
-50
Fig. 4. R
V
Fig. 2. Extended Output Characteristics
GS
-3
-25
-25
= -10V
Fig. 6. Maximum Drain Current vs.
-6
DS(on)
0
0
Junction Temperature
T
J
-9
Case Temperature
- Degrees Centigrade
T
J
Normalized to I
25
- Degrees Centigrade
25
-12
V
@ 25ºC
GS
V
DS
= -10V
-15
50
I
- Volts
50
D
= - 90A
- 9V
-18
75
75
IXTH90P10P
IXTT90P10P
-21
D
- 8V
= - 45A vs.
100
100
I
D
- 7V
-24
= - 45A
125
125
- 6V
-27
- 5V
150
150
-30