IXTH14N80 IXYS, IXTH14N80 Datasheet - Page 4

• Manufacturer Part Number: IXTH14N80
• Description: MOSFET N-CH 800V 14A TO-247
• Manufacturer: IXYS
• Series: MegaMOS™r

Specifications of IXTH14N80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 700 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.7 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 14 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 14
• Rds(on), Max, Tj=25°c, (?): 0.7
• Ciss, Typ, (pf): 4500
• Qg, Typ, (nc): 145
• Trr, Typ, (ns): 800
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
0.01
50
40
30
20
10
12
10
0.1
0.00001
0
8
6
4
2
0
Figure 9. Source Current vs. Source to Drain Voltage
0.2
1
0
Figure 7. Gate Charge
Figure 11. Transient Thermal Resistance
D=0.05
D=0.01
D=0.02
D=0.1
D=0.5
D=0.2
Single pulse
V
0.4
DS
I
I
D
G
50
= 400V
= 15A
= 1mA
Gate Charge - nC
0.6
V
100
0.0001
T
SD
J
= 125
- Volts
0.8
O
C
150
1.0
T
200
J
= 25
1.2
0.001
O
C
D = Duty Cycle
1.4
250
Pulse Width - Seconds
0.01
1 00
0. 1
5000
2500
1000
1 0
500
250
100
1
50
1 0
Figure10. Forward Bias Safe Operating Area
0
Figure 8. Capacitance Curves
5
T
0.1
C
= 25
10
Coss
Crss
Ciss
O
C
15
V
V
DS
DS
1 00
- Volts
- Volts
20
1
25
IXTH 14N80
f = 1MHz
30
35
1 000
40
10ms
100ms
0.1ms
10
1ms
DC
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