IXFK88N20Q IXYS, IXFK88N20Q Datasheet - Page 4

• Manufacturer Part Number: IXFK88N20Q
• Description: MOSFET N-CH 200V 88A TO-264
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK88N20Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 30 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 88A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 146nC @ 10V
• Input Capacitance (ciss) @ Vds: 4150pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 88 A
• Power Dissipation: 500 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 88
• Rds(on), Max, Tj=25°c, (?): 0.028
• Ciss, Typ, (pf): 5250
• Qg, Typ, (nc): 149
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 481
• Rthjc, Max, (ºc/w): 0.26
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
1 0000
1 000
1 00
1 00
200
1 60
1 20
80
60
40
20
80
40
0
0
Fig. 9. Source Current vs. Source-To-Drain
0.4
0
3
f = 1 M Hz
Fig. 7. Input Adm ittance
5
0.55
3.5
Fig. 11. Capacitance
T
J
1 0
= -40ºC
1 25ºC
25ºC
T
C
C
C
0.7
4
J
iss
oss
rss
V
= 1 25ºC
V
1 5
V
GS
SD
DS
Voltage
- Volts
- Volts
0.85
4.5
20
- Volts
25
5
T
1
J
= 25ºC
30
5.5
1 .1 5
35
1 .3
40
6
4,835,592
4,850,072
4,881,106
4,931,844
IXFH 88N20Q IXFK 88N20Q
0.01
1 00
80
60
40
20
0.1
1 0
8
6
4
2
0
0
1
5,017,508
5,034,796
0
0
1
Fig. 12. Maxim um Transient Therm al
T
J
= -40ºC
V
I
I
1 25ºC
D
G
25ºC
Fig. 8. Transconductance
DS
= 44A
= 1 0mA
30
Pulse Width - milliseconds
30
= 1 00V
Fig. 10. Gate Charge
5,049,961
5,063,307
Q
G
60
1 0
Resistance
I
- nanoCoulombs
D
60
- Amperes
90
5,187,117
5,237,481
IXFX 88N20Q
90
1 20
1 00
5,486,715
5,381,025
1 20
1 50
6,306,728B1
1 80
1 50
1 000