IXTT20N50D IXYS, IXTT20N50D Datasheet - Page 5

• Manufacturer Part Number: IXTT20N50D
• Description: MOSFET N-CH 500V 20A TO-268
• Manufacturer: IXYS

Specifications of IXTT20N50D

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 330 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 3.5V @ 250mA
• Gate Charge (qg) @ Vgs: 125nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 400W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.33 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 20 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vds, Max, (v): 500
• Id(on), Min, (a): 20
• Rds(on), Max, (?): 0.33
• Vgs(off), Max, (v): -3.5
• Ciss, Typ, (pf): 6300
• Crss, Typ, (pf): 82
• Qg, Typ, (nc): 78.5
• Pd, (w): 400
• Rthjc, Max, (ºc/w): -
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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1.00
0.10
0.01
100
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0.1
10
R
T
T
D S(on)
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= 150ºC
= 25ºC
Lim it
Fig . 13. Fo r w ar d -Bias
Safe Op e r atin g A r e a
Fig. 14. Maximum Transient Thermal Resistance
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100
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Pulse Width - milliseconds
100μs
1m s
25μs
10m s
10
1000
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IXTH 20N50D
IXTT 20N50D