IXFK32N80P IXYS, IXFK32N80P Datasheet - Page 2

• Manufacturer Part Number: IXFK32N80P
• Description: MOSFET N-CH 800V 32A TO-264
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFK32N80P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 8800pF @ 25V
• Power - Max: 830W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 32 A
• Power Dissipation: 830 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 32
• Rds(on), Max, Tj=25°c, (?): 0.27
• Ciss, Typ, (pf): 8800
• Qg, Typ, (nc): 150
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 830
• Rthjc, Max, (ºc/w): 0.15
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
S
SM
I
d(on)
r
d(off)
f
rr
fs
RM
one or moreof the following U.S. patents:
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
V
F
F
GS
R
DS
GS
GS
G
GS
= I
= 25A, -di/dt = 100 A/µs
= 100V, V
= 0 V
= 20 V; I
= 10 V, V
= 2 Ω (External)
= 10 V, V
S
= 0 V, V
, V
GS
= 0 V,
D
DS
GS
DS
DS
= 0.5 I
= 25 V, f = 1 MHz
4,850,072
4,881,106
= 0 V
= 0.5 V
= 0.5 V
D25
, pulse test
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 I
(T
(T
=0.5 I
J
J
= 25° C unless otherwise specified)
= 25° C unless otherwise specified)
5,049,961
5,063,307
5,187,117
D25
D25
5,237,481
5,381,025
5,486,715
Min.
Min.
23
Characteristic Values
Characteristic Values
8800
Typ. Max.
Typ. Max.
0.15
700
150
0.8
6.0
6,162,665
6,259,123 B1
6,306,728 B1
38
26
30
24
85
24
40
44
0.15 ° C/W
250
1.5
32
70
° C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
TO-264 Outline
PLUS 247
6,683,344
6,710,405B2
6,710,463
Terminals: 1 - Gate
Dim.
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
25.91
19.81
20.32
20.80
15.75
19.81
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
Min.
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Millimeter
5.46 BSC
TM
Millimeter
5.45 BSC
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
6,727,585
6,759,692
6,771,478 B2
Outline
26.16
19.96
20.83
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
IXFK 32N80P
IXFX 32N80P
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
Min.
.215 BSC
.215 BSC
Inches
Inches
Max.
1.030
Max.
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190