IXTK102N30P IXYS, IXTK102N30P Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single IXTK102N30P
Manufacturer Part Number
IXTK102N30P
Description
MOSFET N-CH 300V 102A TO-264
Specifications of IXTK102N30P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
33 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
102A
Vgs(th) (max) @ Id
5V @ 500µA
Gate Charge (qg) @ Vgs
224nC @ 10V
Input Capacitance (ciss) @ Vds
7500pF @ 25V
Power - Max
700W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.033 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
102 A
Power Dissipation
700 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
102
Rds(on), Max, Tj=25°c, (?)
0.033
Ciss, Typ, (pf)
7500
Qg, Typ, (nc)
224
Trr, Typ, (ns)
250
Pd, (w)
700
Rthjc, Max, (k/w)
0.18
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
PolarHT
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
I
E
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
D25
D(RMS)
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GSS
GSM
AR
AS
D
SOLD
GS(th)
DS(on)
d
J
DSS
= 25° C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
External lead current limit
T
T
T
T
I
T
T
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-264
Test Conditions
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ±20 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
, I
D
D
DC
D
= 250 µA
= 500µA
, V
G
= 0.5 I
= 4 Ω
DS
= 0
D25
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
IXTK 102N30P
DSS
JM
,
300
Min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
1.13/10 Nm/lb.in.
300
300
±20
±30
102
250
700
150
300
260
2.5
75
60
60
10
10
±200
250
Max.
5.0
25
33
V/ns
m Ω
mJ
° C
° C
nA
µA
µA
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
g
J
TO-264 (IXTK)
G = Gate
S = Source
Features
l
l
l
Advantages
l
l
l
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Easy to mount
Space savings
High power density
G
D
S
V
I
R
D25
DS(on)
DSS
D = Drain
TAB = Drain
= 300
= 102
≤ ≤ ≤ ≤ ≤
(TAB)
DS99130E(12/05)
33 mΩ Ω Ω Ω Ω
A
V
Related parts for IXTK102N30P
IXTK102N30P Summary of contents
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2006 IXYS All rights reserved IXTK 102N30P Maximum Ratings 300 = 1 MΩ 300 GS ±20 ±30 102 75 250 2.5 ≤ DSS 700 -55 ... +150 150 -55 ... +150 300 260 1 ...
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C, unless otherwise specified) J Min. Typ. , pulse test 45 ...
... Nor m alize d to DS(on) 0 alue D25 2.6 2.4 2 125º 1.8 1.6 1.4 1 100 125 150 175 200 225 250 mperes D © 2006 IXYS All rights reserved C 250 225 200 175 150 125 100 2 2.8 2.6 2.4 2 1.8 1 ...
... Fig. 9. Sour ce Cur Source -To-Drain V oltage 300 250 200 150 100 T = 125º 0.4 0.6 0 olts SD Fig. 11. Capacitance 10000 1000 f = 1MH z 100 olts DS IXYS reserves the right to change limits, test conditions, and dimensions. 100 6 25º 1.2 1.4 1000 C iss 100 C oss ...
... Fig. 13. M axim um Trans ie nt The tance 1.00 0.10 0.01 1 © 2006 IXYS All rights reserved 10 Pulse Width - milliseconds IXTK 102N30P 100 1000 ...
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