IXFK120N25P IXYS, IXFK120N25P Datasheet - Page 2

• Manufacturer Part Number: IXFK120N25P
• Description: MOSFET N-CH 250V 120A TO-264
• Manufacturer: IXYS
• Series: PolarHT™r

Specifications of IXFK120N25P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 185nC @ 10V
• Input Capacitance (ciss) @ Vds: 8000pF @ 25V
• Power - Max: 700W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.024 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 120 A
• Power Dissipation: 700 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 120
• Rds(on), Max, Tj=25°c, (?): 0.024
• Ciss, Typ, (pf): 8700
• Qg, Typ, (nc): 185
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 700
• Rthjc, Max, (ºc/w): 0.18
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
IXYS reserves the right to change limits, test conditions, and dimensions.
S
SM
RM
IXYS MOSFETs and IGBTs are covered by 4,835,592
d(on)
r
d(off)
f
rr
fs
SD
one or moreof the following U.S. patents:
iss
oss
rss
thJC
thCK
g(on)
gs
gd
RM
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
I
V
F
F
DS
GS
GS
GS
GS
GS
G
= I
= 25 A; -di/dt = 100 A/μs; V
= 10 V; I
= 3.3 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
= 0 V
S
, V
GS
= 0 V,
D
DS
DS
= 0.5 I
DS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
4,850,072
4,881,106
D25
, pulse test
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 I
= 60 A
R
(T
(T
= 100 V
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
45
Characteristic Values
Characteristic Values
8000
1300
Typ.
Typ.
0.15
220
130
185
0.8
70
30
33
33
50
80
6,162,665
6,259,123 B1
6,306,728 B1
8
Max.
Max.
0.18°C/W
120
300
200 ns
1.5
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
S
A
A
V
A
TO-264 (IXFK) Outline
PLUS 247
6,683,344
6,710,405B2
6,710,463
Dim.
Terminals: 1 - Gate
A
A
A
b
b
b
C
D
E
e
L
L1
Q
R
1
2
1
2
20.80
15.75
19.81
4.83
2.29
1.91
1.14
1.91
2.92
0.61
3.81
5.59
4.32
Min.
TM
Millimeter
5.45 BSC
6,727,585
6,759,692
6,771,478 B2
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
(IXFX) Outline
IXFK 120N25P
IXFX 120N25P
21.34
16.13
20.32
Max.
5.21
2.54
2.16
1.40
2.13
3.12
0.80
4.32
6.20
4.83
Min.
.190
.090
.075
.045
.075
.115
.024
.819
.620
.780
.150
.220 0.244
.170
.215 BSC
Inches
Max.
.205
.100
.085
.055
.084
.123
.031
.840
.635
.800
.170
.190