IXTT30N50L IXYS, IXTT30N50L Datasheet

no-image

IXTT30N50L

Manufacturer Part Number
IXTT30N50L
Description
MOSFET N-CH 500V 30A TO-268
Manufacturer
IXYS
Datasheet

Specifications of IXTT30N50L

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
200 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
240nC @ 10V
Input Capacitance (ciss) @ Vds
10200pF @ 25V
Power - Max
400W
Mounting Type
Surface Mount
Package / Case
TO-268
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.20
Ciss, Typ, (pf)
10200
Qg, Typ, (nc)
240
Trr, Typ, (ns)
500
Pd, (w)
400
Rthjc, Max, (k/w)
0.31
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power MOSFET with
Extended FBSOA
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
E
E
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2007 IXYS CORPORATION, All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AR
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.063in) from case for 10s
Plastic body for 10s
Mounting torque (TO-247, TO-3P)
TO-247
TO-3P
TO-268
V
V
V
V
V
V
Test Conditions
Test Conditions
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 10V, I
= 0V, I
= V
= ±30V, V
= V
= 0V
GS
DSS
, I
D
D
D
= 250μA
= 250μA
= 0.5 • I
DS
= 0V
D25
GS
, Note 1
= 1MΩ
Preliminary Technical Information
T
J
= 125°C
JM
IXTQ30N50L
IXTH30N50L
IXTT30N50L
-55 to +150
-55 to +150
Characteristic Values
Min.
500
2.5
1.13/10
Maximum Ratings
+150
±20
G
500
500
±30
400
300
260
1.5
6.0
5.0
5.5
50
60
30
30
O
Typ.
R
w
w
Gi
±100
0.20
300
Nm/lb.in.
Max.
4.5
50
D
O
O
O
S
D D D D
mJ
μA
μA
°C
nA
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
g
J
V
I
R
TO-247 (IXTH)
TO-3P (IXTQ)
TO-268 (IXTT)
G = Gate
S = Source TAB = Drain
Features
Applications
D25
Designed for linear operation
International standard packages
Unclamped Inductive Switching
(UIS) rated.
Molding epoxies meet UL 94 V-0
flammability classification
Integrated gate resistor for easy
paralleling
Guaranteed FBSOA at 75°C
Solid state circuit breakers
Soft start controls
Linear amplifiers
Programmable loads
Current regulators
DS(on)
DSS
G
D
S
G
≤ ≤ ≤ ≤ ≤ 0.20Ω Ω Ω Ω Ω
= 500V
= 30A
D
S
= Drain
DS99786(10/07)
(TAB)
(TAB)
(TAB)

Related parts for IXTT30N50L

IXTT30N50L Summary of contents

Page 1

... GSS DSS DS DSS 0.5 • 10V, I DS(on D25 © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTH30N50L IXTQ30N50L IXTT30N50L G O Maximum Ratings 500 = 1MΩ 500 GS ±20 ± 1.5 400 -55 to +150 +150 -55 to +150 300 260 1.13/10 6.0 5.5 5 ...

Page 2

... BSC Max. TO-3P (IXTQ) Outline 30 A 120 A 1 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 IXTT30N50L ∅ Drain Tab - Drain Inches Min. Max. 5.3 .185 .209 2.54 .087 .102 2.6 .059 .098 1.4 .040 .055 2 ...

Page 3

... Fig. 2. Extended Output Characteristics @ T = 25º 20V GS 14V 70 12V 60 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 30A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXTT30N50L 15A Value 15A D 75 100 125 150 75 100 125 150 ...

Page 4

... C iss C oss 0.10 C rss 0. IXTH30N50L IXTQ30N50L Fig. 8. Transconductance Amperes D Fig. 10. Gate Charge 250V 15A 10mA 100 150 200 Q - NanoCoulombs G Fig. 12. Maximum Transient Thermal Impedance 0.0001 0.001 0.01 0.1 Pulse Width - Seconds IXTT30N50L 40ºC J 25ºC 125º 250 300 350 1 10 ...

Page 5

... IXYS CORPORATION, All rights reserved Fig. 14. Forward-Bias Safe Operating Area 100.0 R DS(on) 25µs 100µs 10.0 1ms 10ms 1.0 100ms 150ºC J Single Pulse 0.1 1000 10 IXTH30N50L IXTQ30N50L IXTT30N50L @ T = 75ºC C Limit DC 100 V - Volts DS IXYS REF: T_30N50L(7R)10-19-07 25µs 100µs 1ms 10ms 100ms 1000 ...

Related keywords