IXFH88N30P IXYS, IXFH88N30P Datasheet - Page 2

no-image

IXFH88N30P

Manufacturer Part Number
IXFH88N30P
Description
MOSFET N-CH 300V 88A TO-247
Manufacturer
IXYS
Series
PolarHT™r
Datasheet

Specifications of IXFH88N30P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
40 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
88A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
180nC @ 10V
Input Capacitance (ciss) @ Vds
6300pF @ 25V
Power - Max
600W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.04 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
88 A
Power Dissipation
600 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
88
Rds(on), Max, Tj=25°c, (?)
0.04
Ciss, Typ, (pf)
6300
Qg, Typ, (nc)
180
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
600
Rthjc, Max, (ºc/w)
0.21
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH88N30P
Manufacturer:
IXYS
Quantity:
15 500
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
(T
S
SM
d(on)
r
d(off)
f
rr
TO-268 (IXFT) Outline
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
V
Resistive Switching Times
V
R
V
TO-247
Test Conditions
V
Repetitive, Pulse Width Limited by T
I
I
V
Test Conditions
TO-264
F
F
DS
GS
GS
GS
GS
R
G
= I
= 25A, -di/dt = 100A/μs,
= 100V, V
= 10V, V
= 3.3Ω (External)
= 0V
= 10V, I
= 0V, V
= 10V, V
S
, V
GS
= 0V, Note 1
DS
D
GS
DS
DS
= 0.5 • I
= 25V, f = 1MHz
= 0V
= 0.5 • V
= 0.5 • V
4,835,592
4,881,106
D25
DSS
, Note 1
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 60A
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
Min.
Min.
40
6,162,665
6,259,123 B1
6,306,728 B1
6300
Typ.
0.21
0.15
Typ.
950
190
180
100
0 .6
25
24
96
25
44
90
60
0.21 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
200
220
1.5
88
°C/W
°C/W
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
IXFT88N30P IXFH88N30P
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-264 (IXFK) Outline
TO-247 (IXFH) Outline
Terminals: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
1
2
1
2
1
20.80
15.75
19.81
25.91
19.81
20.32
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
Millimeter
4.7
2.2
2.2
1.0
Millimeter
5.46 BSC
2
3 - Source
.4
7,005,734 B2
7,063,975 B2
3
26.16
19.96
20.83
21.46
16.26
20.32
IXFK88N30P
Max.
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
e
5.3
2.6
1.4
.8
∅ P
1.020
Min.
0.205 0.225
0.232 0.252
.190
.100
.079
.044
.094
.114
.021
.780
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
.215 BSC
Inches
Inches
7,157,338B2
Max.
1.030
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072

Related parts for IXFH88N30P