IXFH23N60Q IXYS, IXFH23N60Q Datasheet - Page 4

• Manufacturer Part Number: IXFH23N60Q
• Description: MOSFET N-CH 600V 23A TO-247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH23N60Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 3300pF @ 25V
• Power - Max: 400W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.32 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 23 A
• Power Dissipation: 400 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 23
• Rds(on), Max, Tj=25°c, (?): 0.32
• Ciss, Typ, (pf): 3300
• Qg, Typ, (nc): 90
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 400
• Rthjc, Max, (ºc/w): 0.31
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
1 0000
1 000
60
50
40
30
20
1 00
1 0
40
35
30
25
20
0
1 5
1 0
5
0
0.3
3.5
Fig. 9. Source Current vs. Source-To-Drain
0
f = 1 M Hz
Fig. 7. Input Admittance
5
4
Fig. 11. Capacitance
0.5
T
1 0
T
4.5
J
J
= 1 25ºC
= -40ºC
1 25ºC
V
25ºC
V
1 5
V
SD
GS
C
C
C
DS
5
Voltage
iss
oss
rss
- Volts
0.7
- Volts
20
- Volts
5.5
25
6
0.9
T
30
J
= 25ºC
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6.5
35
1 .1
40
7
42
36
30
24
1 8
1 2
0.01
6
0
1 0
0.1
8
6
4
2
0
1
0
0
T
Fig. 12. Maxim um T ransient T herm al
1
J
= -40ºC
1 25ºC
V
I
I
D
G
Fig. 8. Transconductance
25ºC
DS
= 1 1 .5A
= 1 0mA
1 0
= 300V
20
Puls e Width - millis ec onds
Fig. 10. Gate Charge
Q
20
G
I
10
D
- nanoCoulombs
Resistance
- Amperes
40
30
IXFH 23N60Q
IXFT 23N60Q
60
40
100
80
50
6,534,343
1000
60
1 00