IXFH30N60P IXYS, IXFH30N60P Datasheet - Page 4

MOSFET N-CH 600V 30A TO-247

IXFH30N60P

Manufacturer Part Number
IXFH30N60P
Description
MOSFET N-CH 600V 30A TO-247
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFH30N60P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
82nC @ 10V
Input Capacitance (ciss) @ Vds
4000pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.24 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
27 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
30 A
Power Dissipation
500000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.24
Ciss, Typ, (pf)
4000
Qg, Typ, (nc)
82
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH30N60P
Manufacturer:
IXYS
Quantity:
15 500
IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
10
5
0
0
3.5
0.4
0
f = 1MH z
0.5
5
4
T
J
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Sour ce Cur re nt vs .
= 125
Source -To-Drain V oltage
10
T
-40
25
J
4.5
0.6
= 125
º
º
º
C
C
C
V
V
15
V
G S
º
S D
0.7
D S
C
5
C oss
C rs s
- V olts
C iss
- V olts
20
- V olts
5.5
0.8
25
T
J
0.9
= 25
6
30
º
C
6.5
1
35
1.1
40
7
1.00
0.10
0.01
50
45
40
35
30
25
20
15
10
10
5
0
9
8
7
6
5
4
3
2
1
0
0.1
0
Fig. 12. M axim um Tr ans ie nt The rm al
0
V
I
I
IXFV 30N60P IXFV 30N60PS
T
D
G
J
DS
10
5
= 15A
= 10m A
IXFH 30N60P IXFT 30N60P
= -40
Fig. 8. Trans conductance
125
= 300V
25
20
º
º
Fig. 10. Gate Char ge
Pulse Width - milliseconds
º
10
C
C
C
1
Q
Re s is tance
30
G
15
I
- nanoCoulombs
D
- A mperes
40
20
10
IXYS REF: T_30N60P (7J) 12-05-05-B.xls
50
25
60
100
30
70
35
80
1000
40
90

Related parts for IXFH30N60P