IXFH66N20Q IXYS, IXFH66N20Q Datasheet
IXFH66N20Q
Specifications of IXFH66N20Q
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IXFH66N20Q Summary of contents
Page 1
... GS(th GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 2003 IXYS All rights reserved IXFH 66N20Q IXFT 66N20Q g Maximum Ratings 200 = 1 M 200 264 1 DSS 400 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in Characteristic Values Min. Typ. Max. ...
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... 25A, -di/dt = 100 Min. Recommended Footprint Dimensions in mm and inches IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J Min. Typ. Max. , pulse test ...
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... V - Volts DS Fig. 3. Output Characteristics @ 125 Deg Volts DS Fig Normalized to I DS(on) Value vs Amperes D © 2003 IXYS All rights reserved 6V 5V 2 D25 D º C º IXFH 66N20Q IXFT 66N20Q Fig. 2. Extended Output Characteristics @ 25 deg Volts D S Fig Normalized to I Value vs. ...
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... Fig. 11. Capacitance 1 0000 iss 1 000 C oss C rss Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 5.5 6 6.5 7 º 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 ...