IXFH30N40Q IXYS, IXFH30N40Q Datasheet - Page 2

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IXFH30N40Q

Manufacturer Part Number
IXFH30N40Q
Description
MOSFET N-CH 400V 30A TO-247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet

Specifications of IXFH30N40Q

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
160 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 4mA
Gate Charge (qg) @ Vgs
95nC @ 10V
Input Capacitance (ciss) @ Vds
3300pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.16 Ohms
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
30 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
400
Id(cont), Tc=25°c, (a)
30
Rds(on), Max, Tj=25°c, (?)
0.16
Ciss, Typ, (pf)
3300
Qg, Typ, (nc)
95
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
298
Rthjc, Max, (ºc/w)
0.42
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
F
DS
GS
F
S
GS
GS
GS
G
S
GS
£
D
W
DS
m
DS
DS
D25
m
R
DSS
DSS
J
J
D
D
£
JM
°
°
D25
D25
4,835,592
4,850,072
4,881,106
4,931,844
m
5,017,508
5,034,796
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
ÆP
Q
R
S
1
2
1
2
5,049,961
5,063,307
3 - Source
1
IXFH 30N40Q
IXFT 30N40Q
20.80
15.75
19.81
Min.
2
1.65
2.87
5.20
3.55
5.89
4.32
6.15
Millimeter
4.7
2.2
2.2
1.0
.4
3
BSC
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
5,187,117
5,237,481
.8
2 - Drain
Tab - Drain
0.205
0.232
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
242
Inches
BSC
5,486,715
5,381,025
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
0.225
0.252
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216

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