IRFS3006-7PPBF International Rectifier, IRFS3006-7PPBF Datasheet - Page 4

• Manufacturer Part Number: IRFS3006-7PPBF
• Description: MOSFET N-CH 60V 240A D2PAK-7
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFS3006-7PPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.1 mOhm @ 168A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 240A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 8850pF @ 50V
• Power - Max: 375W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (6 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 293 A
• Power Dissipation: 375 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 200 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
1000
100
350
300
250
200
150
100
1.0
10
50
Fig 11. Typical C
0
0.0
25
2.5
2.0
1.5
1.0
0.5
0.0
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
T J = 175°C
0
V SD , Source-to-Drain Voltage (V)
50
0.4
T C , Case Temperature (°C)
Case Temperature
V DS, Drain-to-Source Voltage (V)
10
Forward Voltage
Limited By Package
75
T J = 25°C
0.8
OSS
20
100
Stored Energy
1.2
30
125
V GS = 0V
40
1.6
150
50
2.0
175
60
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
10000
1000
1400
1200
1000
100
800
600
400
200
0.1
10
80
75
70
65
60
55
1
0
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
25
Tc = 25°C
Tj = 175°C
Single Pulse
LIMITED BY PACKAGE
Id = 5mA
Starting T J , Junction Temperature (°C)
V DS , Drain-to-Source Voltage (V)
50
OPERATION IN THIS AREA
LIMITED BY R DS (on)
T J , Temperature ( °C )
75
1
100
TOP
BOTTOM 168A
DC
125
10
10msec
100µsec
1msec
150
I D
35A
70A
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100
175