IXFH9N80Q IXYS, IXFH9N80Q Datasheet
IXFH9N80Q
Manufacturer Part Number
IXFH9N80Q
Description
MOSFET N-CH 800V 9A TO-247
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFH9N80Q.pdf
(2 pages)
Specifications of IXFH9N80Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
56nC @ 10V
Input Capacitance (ciss) @ Vds
2200pF @ 25V
Power - Max
180W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.1 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
9 A
Power Dissipation
180 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
9
Rds(on), Max, Tj=25°c, (?)
1.1
Ciss, Typ, (pf)
2200
Qg, Typ, (nc)
56
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
179
Rthjc, Max, (ºc/w)
0.70
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFH9N80Q
Manufacturer:
IXYS
Quantity:
6 000
Company:
Part Number:
IXFH9N80Q
Manufacturer:
IXYS
Quantity:
35 500
HiPerFET
Power MOSFETs
Q-Class
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
© 1999 IXYS All rights reserved
N-Channel Enhancement Mode
Avalanche Rated Low Q
Symbol
V
V
I
I
R
DM
D25
AR
GSS
DSS
JM
L
AR
J
stg
DSS
DGR
GS
GSM
AS
D
GS(th)
d
DSS
DS(on)
Test Conditions
T
T
Continuous
Transient
T
T
pulse width limited by T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Test Conditions
V
V
V
V
V
V
Pulse test, t
S
C
C
C
C
C
J
J
J
GS
GS
GS
GS
DS
DS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C,
= 25 C
= 25 C
= 25 C
= 0 V, I
= V
= 20 V
= 0.8 V
= 0 V
= 10 V, I
150 C, R
I
DM
TM
, di/dt 100 A/ s, V
GS
, I
D
D
DSS
DC
D
= 1 mA
= 2.5 mA
, V
G
= 0.5 I
300 s, duty cycle d
= 2
DS
g
, High dv/dt
= 0
D25
GS
JM
= 1 M
DD
(T
T
T
J
J
J
V
= 25 C
= 125 C
= 25 C, unless otherwise specified)
DSS
,
2 %
800
min.
3.0
IXFH 9N80Q
IXFT 9N80Q
-55 ... +150
-55 ... +150
Characteristic Values
1.13/10
Maximum Ratings
typ.
180
800
800
300
150
700
36
20
20
30
6
4
9
5
9
100
max.
5.0
1.1
Nm/lb.in.
50
1
V/ns
mJ
mJ
mA
W
C
C
C
C
nA
V
V
V
V
A
A
A
g
g
V
V
A
G = Gate
S = Source
TO-268 (D3) ( IXFT)
Features
l
l
l
l
l
l
Advantages
l
l
l
TO-247 AD (IXFH)
V
I
R
t
D25
rr
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Unclamped Inductive Switching (UIS)
rated
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
Space savings
High power density
DSS
DS(on)
250 ns
DS (on)
G
S
TAB = Drain
D
= 1.1
=
= 800 V
g
= Drain
process
9 A
98629 (6/99)
(TAB)
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IXFH9N80Q Summary of contents
Page 1
... GS(th GSS 0.8 V DSS DS DSS 0.5 I DS(on D25 Pulse test, t 300 s, duty cycle d © 1999 IXYS All rights reserved IXFH 9N80Q IXFT 9N80Q Maximum Ratings 800 = 1 M 800 700 DSS 180 -55 ... +150 150 -55 ... +150 300 1.13/ Characteristic Values ( unless otherwise specified) J min ...
Page 2
... Pulse test, t 300 s, duty cycle -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. , pulse test 3 5 2200 240 41 ...