IXFH6N120 IXYS, IXFH6N120 Datasheet - Page 4

• Manufacturer Part Number: IXFH6N120
• Description: MOSFET N-CH 1200V 6A TO-247
• Manufacturer: IXYS

Specifications of IXFH6N120

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.6 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 1950pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.6 Ohms
• Drain-source Breakdown Voltage: 1200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 1200
• Id(cont), Tc=25°c, (a): 6
• Rds(on), Max, Tj=25°c, (?): 2.6
• Ciss, Typ, (pf): 1950
• Qg, Typ, (nc): 56
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 300
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
IXYS reserves the right to change limits, test conditions, and dimensions.
1 0000
1 000
1 00
20
1 0
1 6
1 2
6
5
4
3
2
0
8
4
0
1
3.5
Fig. 9. Source Current vs. Source-To-Drain
0.4
0
f = 1 M hz
Fig. 7. Input Admittance
5
4
T
0.5
Fig. 11. Capacitance
J
T
= 1 25ºC
1 0
J
= -40ºC
1 25ºC
4.5
25ºC
V
V
1 5
V
0.6
GS
SD
DS
Voltage
- Volts
- Volts
20
- Volts
5
0.7
C
C
C
25
iss
oss
rss
5.5
30
T
J
0.8
= 25ºC
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6
35
6.5
0.9
40
0.01
0.1
1 2
1 0
1 0
8
6
4
2
0
8
6
4
2
0
1
0
0
Fig. 12. Maximum Transient Thermal
1
V
I
I
D
G
Fig. 8. Transconductance
T
DS
= 3A
= 1 0mA
1 .5
1 0
J
Pulse Width - milliseconds
= 600V
= -40ºC
1 25ºC
Fig. 10. Gate Charge
25ºC
Q
G
20
1 0
3
Resistance
I
D
- nanoCoulombs
- Amperes
4.5
30
IXFH 6N120
1 00
40
6
7.5
50
6,534,343
1 000
9
60