IXFH24N50Q IXYS, IXFH24N50Q Datasheet - Page 4

• Manufacturer Part Number: IXFH24N50Q
• Description: MOSFET N-CH 500V 24A TO-247
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFH24N50Q

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 230 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 24A
• Vgs(th) (max) @ Id: 4.5V @ 4mA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 3900pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 24
• Rds(on), Max, Tj=25°c, (?): 0.23
• Ciss, Typ, (pf): 3900
• Qg, Typ, (nc): 95
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 298
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
50
45
40
35
30
25
20
15
10
12
10
5
0
8
6
4
2
0
0.2
1.00
0.10
0.01
0.00
0
Fig.9 Drain Current vs Drain to Source Voltage
Fig.7 Gate Charge Characteristic Curve
10
Fig.10 Transient Thermal Impedance
-5
V
Single Pulse
D=0.2
D=0.1
D=0.01
0.4
D=0.5
D=0.05
D=0.02
20
DS
I
I
D
G
= 250 V
= 13 A
= 10 mA
T
J
Gate Charge - nC
= 125
40
0.6
V
O
SD
C
60
- Volts
10
0.8
-4
T
J
80
= 25
1.0
O
C
100
1.2
10
120
-3
1.4
Pulse Width - Seconds
4,835,592
4,850,072
10
-2
4,881,106
4,931,844
10000
1000
100
0
Fig.8 Capacitance Curves
5,017,508
5,034,796
5
IXFH 24N50Q IXFT 24N50Q
IXFH 26N50Q IXFT 26N50Q
10
10
-1
Coss
Crss
5,049,961
5,063,307
15
V
Ciss
DS
- Volts
20
5,187,117
5,237,481
25
10
0
30
f = 1MHz
5,486,715
5,381,025
35
6,306,728B1
40
10
1