IXTQ23N60Q IXYS, IXTQ23N60Q Datasheet
IXTQ23N60Q
Specifications of IXTQ23N60Q
Related parts for IXTQ23N60Q
IXTQ23N60Q Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved IXTQ 23N60Q Maximum Ratings 600 = 1 MΩ 600 GS ±30 ± 1.5 ≤ DSS 400 -55 ... +150 150 -55 ... +150 300 1.13/10 Nm/lb.in. 6 Characteristic Values Min ...
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... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min. ...
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... Deg 10V Volts D S Fig Norm alized to I DS(on) Value 3 10V GS 2.8 2.5 T 2.2 1.9 1.6 1 Amperes D © 2003 IXYS All rights reserved 3.1 2.8 6V 2.5 2.2 1.9 1.6 5V 1.3 0.7 0 D25 125º 25º IXTQ 23N60Q Fig. 2. Extende d Output Characte ris tics @ 25 deg ...
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... V - Volts S D Fig. 11. Capacitance 10000 f = 1MHz 1000 100 Volts DS IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 5 25ºC J 0.8 0 iss ...