IXFH24N80P IXYS, IXFH24N80P Datasheet - Page 4

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IXFH24N80P

Manufacturer Part Number
IXFH24N80P
Description
MOSFET N-CH 800V 24A TO-247
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFH24N80P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
105nC @ 10V
Input Capacitance (ciss) @ Vds
7200pF @ 25V
Power - Max
650W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohms
Forward Transconductance Gfs (max / Min)
25 s
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
24 A
Power Dissipation
650 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
24
Rds(on), Max, Tj=25°c, (?)
0.4
Ciss, Typ, (pf)
5800
Qg, Typ, (nc)
100
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
650
Rthjc, Max, (ºc/w)
0.19
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH24N80P
Manufacturer:
IXYS
Quantity:
15 500
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
100
36
32
28
24
20
16
12
40
36
32
28
24
20
16
12
10
8
4
0
8
4
0
0.3
3
0
f = 1 MHz
0.4
5
Fig. 9. Forward Voltage Drop of
3.5
10
Fig. 7. Input Admittance
0.5
Fig. 11. Capacitance
Intrinsic Diode
4
T
T
15
J
V
J
V
V
= 125ºC
DS
= 125ºC
- 40ºC
GS
SD
0.6
25ºC
- Volts
- Volts
- Volts
20
4.5
C rss
C oss
C iss
0.7
25
5
0.8
30
T
J
= 25ºC
5.5
0.9
35
40
1
6
1.00
0.10
0.01
10
65
60
55
50
45
40
35
30
25
20
15
10
0.0001
9
8
7
6
5
4
3
2
1
0
5
0
0
0
T
J
= - 40ºC
10
V
I
I
125ºC
D
G
5
DS
25ºC
= 12A
Fig. 12. Maximum Transient Thermal
= 10mA
IXFH 24N80P IXFK 24N80P
= 400V
0.001
20
10
Fig. 8. Transconductance
30
15
Q
Pulse Width - Seconds
Fig. 10. Gate Charge
G
40
I
- NanoCoulombs
D
0.01
20
Resistance
- Amperes
50
25
60
0.1
30
F_24N80P (8J) 6-22-06.xls
70
IXFT 24N80P
35
80
40
1
90
45
100
10
110
50

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