IXFV36N50PS IXYS, IXFV36N50PS Datasheet - Page 4

• Manufacturer Part Number: IXFV36N50PS
• Description: MOSFET N-CH 500V 36A PLUS220-SMD
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFV36N50PS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 5V @ 4mA
• Gate Charge (qg) @ Vgs: 93nC @ 10V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 540W
• Mounting Type: Surface Mount
• Package / Case: PLUS-220SMD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.17 Ohms
• Forward Transconductance Gfs (max / Min): 36 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 36 A
• Power Dissipation: 540 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 36
• Rds(on), Max, Tj=25°c, (?): 0.17
• Ciss, Typ, (pf): 5500
• Qg, Typ, (nc): 93
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 540
• Rthjc, Max, (ºc/w): 0.23
• Package Style: PLUS220 SMD
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
100
55
50
45
40
35
30
25
20
15
10
90
80
70
60
50
40
30
20
10
10
5
0
0
0.4
4
0
f = 1MH z
T
0.5
J
5
4.5
= 125ºC
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
T
-40ºC
Fig. 9. Sour ce Cur re nt vs .
Sour ce -To-Dr ain V oltage
25ºC
J
0.6
10
= 125ºC
5
V
0.7
V
15
V
G S
S D
D S
- V olts
- V olts
5.5
0.8
20
- V olts
T
J
0.9
= 25ºC
25
6
30
1
C is s
C oss
C rs s
6.5
1.1
35
1.2
40
7
100
10
70
60
50
40
30
20
10
10
1
0
9
8
7
6
5
4
3
2
1
0
10
0
0
T
R
J
T
T
V
I
I
DS(on)
D
G
IXFV 36N50P IXFV 36N50PS
J
C
10
= -40ºC
DS
10
125ºC
= 18A
= 10m A
= 150ºC
= 25ºC
Fig. 8. Trans conductance
25ºC
IXFH36N50P IXFT 36N50P
= 250V
20
Lim it
20
Fig. 10. Gate Char ge
Fig. 12. Forw ar d-Bias
Safe Ope r ating Ar e a
Q
30
30
G
I
- nanoCoulombs
V
D
40
D S
- A mperes
D C
40
100
- V olts
50
50
60
60
70
70
80
100µs
1m s
10m s
80
25µs
90
1000
100
90