IXFC20N80P IXYS, IXFC20N80P Datasheet
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IXFC20N80P
Specifications of IXFC20N80P
Related parts for IXFC20N80P
IXFC20N80P Summary of contents
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... ± GSS DSS DS DSS DS(on Pulse test, t ≤ 300 μs, duty cycle d ≤ © 2006 IXYS All rights reserved IXFC 20N80P IXFR 20N80P Maximum Ratings 800 = 1 MΩ 800 GS ±30 ± 1.0 ≤ DSS 166 -55 ... +150 150 -55 ... +150 300 2500 11..65 / 2.5..15 20 ...
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... I = 20A, -di/dt = 100 A/μ 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25°C unless otherwise specified) J Min. Typ. Max 4680 ...
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... olts D S Fig Nor m alize d to DS(on 10A V alue ain Cur 2.6 2 10V GS 2.2 2 1.8 1.6 1.4 1 mperes D © 2006 IXYS All rights reserved º º C 2.6 = 10V 2.4 7V 2.2 1.8 6V 1.6 1.4 1.2 0.8 5V 0.6 0 º 125 C J º ...
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... Fig. 9. Source Cur Sour ce -To-Dr ain V oltage º 125 0.4 0.5 0.6 0.7 0 olts S D Fig. 11. Capacitance 10000 1000 100 f = 1MH olts D S IXYS reserves the right to change limits, test conditions, and dimensions 5.25 5.5 5. º 0.9 1 1.1 1.2 1.00 0.10 0. ...