IXTQ24N55Q IXYS, IXTQ24N55Q Datasheet
IXTQ24N55Q
Manufacturer Part Number
IXTQ24N55Q
Description
MOSFET N-CH 550V 24A TO-3P
Manufacturer
IXYS
Datasheet
1.IXTQ24N55Q.pdf
(2 pages)
Specifications of IXTQ24N55Q
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
550V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
3000pF @ 25V
Power - Max
400W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.27 Ohms
Drain-source Breakdown Voltage
550 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
24 A
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
550
Id(cont), Tc=25°c, (a)
24
Rds(on), Max, Tj=25°c, (?)
0.27
Ciss, Typ, (pf)
3000
Qg, Typ, (nc)
80
Trr, Typ, (ns)
500
Pd, (w)
400
Rthjc, Max, (k/w)
0.31
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
M
Weight
Symbol
V
V
I
I
R
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, Low Q
© 2003 IXYS All rights reserved
DM
D25
AR
GSS
DSS
J
JM
stg
L
DGR
GS
GSM
AR
AS
D
GS(th)
DSS
DSS
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Test Conditions
V
V
V
V
V
V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
S
C
C
C
C
C
J
J
J
GS
DS
GS
DS
GS
GS
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0 V, I
= V
= ±30 V
= V
= 0 V
= 10 V, I
DM
GS
DSS
, di/dt ≤ 100 A/µs, V
, I
D
D
DC
D
= 250 µA
= 250 µA
, V
= 0.5 I
G
= 2 Ω
DS
g
= 0
, High dv/dt
D25
GS
= 1 MΩ
DD
(T
T
T
≤ V
J
J
Advanced Technical Information
J
= 25°C, unless otherwise specified)
DSS
= 25°C
= 125°C
,
JM
IXTQ 24N55Q
550
min.
2.5
-55 to +150
-55 to +150
Characteristic Values
Maximum Ratings
1.13/10 Nm/lb.in.
typ.
±30
±40
400
300
550
550
1.5
150
24
96
24
30
10
6
±100
0.27
max.
4.5
25
1
V/ns
mJ
°C
°C
°C
°C
mA
W
nA
µA
V
V
V
V
A
A
A
V
V
g
Ω
J
V
I
R
TO-3P (IXTQ)
Features
Advantages
S = Source TAB = Drain
G = Gate
D25
IXYS advanced low Q
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Rated for unclamped Inductive load
switching (UIS) rated
Molding epoxies meet UL 94 V-0
flammability classification
Easy to mount
Space savings
High power density
DSS
DS(on)
G
D
DS (on)
S
D
= 550 V
= 24 A
= 0.27 Ω Ω Ω Ω Ω
= Drain
g
DS99079(08/03)
process
(TAB)
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IXTQ24N55Q Summary of contents
Page 1
... GSS DSS DS DSS 0.5 I DS(on D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ © 2003 IXYS All rights reserved Advanced Technical Information IXTQ 24N55Q Maximum Ratings 550 = 1 MΩ 550 GS ±30 ± 1.5 ≤ DSS 400 -55 to +150 150 ...
Page 2
... Pulse test, t ≤ 300 µs, duty cycle d ≤ -di/dt = 100 A/µ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. ...